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quality Diodes DMP6350S 7 P Channel Enhancement Mode MOSFET Featuring Lead Free and RoHS Compliant Materials factory
quality Diodes DMP6350S 7 P Channel Enhancement Mode MOSFET Featuring Lead Free and RoHS Compliant Materials factory

Diodes DMP6350S 7 P Channel Enhancement Mode MOSFET Featuring Lead Free and RoHS Compliant Materials

Key Attributes
Model Number: DMP6350S-7
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
1.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
550mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
-
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
206pF@30V
Pd - Power Dissipation:
1.17W
Gate Charge(Qg):
4.1nC@10V
Mfr. Part #:
DMP6350S-7
Package:
SOT-23
Product Description

Product Overview

The DMP6350S is a 60V P-Channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power management applications, including battery charging, power management functions, DC-DC converters, and portable power adaptors. It features low on-resistance, low input capacitance, fast switching speed, and low input/output leakage.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: P-Channel Enhancement Mode MOSFET
  • Environmental Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
  • Reliability: Qualified to AEC-Q101 Standards
  • Case Material: Molded Plastic, Green Molding Compound
  • UL Flammability Classification: 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Finish: Matte Tin Annealed over Copper Leadframe

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Voltage BVDSS -60 V VGS = 0V, ID = -250A
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (Note 6) ID -1.5 A TA = +25°C, VGS = -10V
-1.2 TA = +70°C, VGS = -10V
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM -6 A
Power Dissipation (Note 5) PD 0.72 W
Thermal Resistance, Junction to Ambient (Note 5) RθJA 176 °C/W @TA = +25°C
Power Dissipation (Note 6) PD 1.17 W
Thermal Resistance, Junction to Ambient (Note 6) RθJA 108 °C/W @TA = +25°C
Thermal Resistance, Junction to Case RθJC 34 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Zero Gate Voltage Drain Current IDSS -1.0 µA VDS = -60V, VGS = 0V, TJ = +25°C
Gate-Source Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V
Gate Threshold Voltage VGS(TH) -1.0 to -3.0 V VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance RDS(ON) 350 mΩ VGS = -10V, ID = -0.9A
550 VGS = -4.5V, ID = -0.8A
Diode Forward Voltage VSD -0.8 to -1.2 V VGS = 0V, IS = -1A
Input Capacitance Ciss 206 pF VDS = -30V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 15 pF VDS = -30V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 11 pF VDS = -30V, VGS = 0V, f = 1.0MHz
Gate Resistance Rg 17 Ω VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V) Qg 2.0 nC VDS = -30V, ID = -0.9A
Total Gate Charge (VGS = -10V) Qg 4.1 nC VDS = -30V, ID = -0.9A
Gate-Source Charge Qgs 0.5 nC
Gate-Drain Charge Qgd 0.8 nC
Turn-On Delay Time tD(ON) 3.6 ns VDD = -30V, VGS = -10V, ID = -1.0A, Rg = 6Ω
Turn-On Rise Time tR 3.8 ns VDD = -30V, VGS = -10V, ID = -1.0A, Rg = 6Ω
Turn-Off Delay Time tD(OFF) 12.3 ns VDD = -30V, VGS = -10V, ID = -1.0A, Rg = 6Ω
Turn-Off Fall Time tF 7.3 ns VDD = -30V, VGS = -10V, ID = -1.0A, Rg = 6Ω
Body Diode Reverse Recovery Time tRR 8.2 ns IS = -1.0A, di/dt = -100A/µs
Body Diode Reverse Recovery Charge QRR 2.7 nC IS = -1.0A, di/dt = -100A/µs
Model Part Number Case Packaging
DMP6350S DMP6350S-7 SOT23 3,000/Tape & Reel (Note 4)
DMP6350S DMP6350S-13 SOT23 10,000/Tape & Reel (Note 4)
Package Outline Dimensions (mm) Value
A 0.37 - 0.51 (Typ 0.40)
B 1.20 - 1.40 (Typ 1.30)
C 2.30 - 2.50 (Typ 2.40)
D 0.89 - 1.03 (Typ 0.915)
F 0.45 - 0.60 (Typ 0.535)
G 1.78 - 2.05 (Typ 1.83)
H 2.80 - 3.00 (Typ 2.90)
J 0.013 - 0.10 (Typ 0.05)
K 0.890 - 1.00 (Typ 0.975)
K1 0.903 - 1.10 (Typ 1.025)
L 0.45 - 0.61 (Typ 0.55)
L1 0.25 - 0.55 (Typ 0.40)
M 0.085 - 0.150 (Typ 0.110)
a 0° - 8°
Suggested Pad Layout (mm) Value
C 2.0
X 0.8
X1 1.35
Y 0.9
Y1 2.9

1809081614_DIODES-DMP6350S-7_C155308.pdf

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