N Channel Enhancement Mode MOSFET DMN6140L 7 with 60V Drain Source Breakdown Voltage and Low Leakage
Key Attributes
Model Number:
DMN6140L-7
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-
RDS(on):
170mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
315pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
8.6nC@10V
Mfr. Part #:
DMN6140L-7
Package:
SOT-23
Product Description
DMN6140L - 60V N-Channel Enhancement Mode MOSFET
Product Overview
The DMN6140L is a new generation N-channel enhancement mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal for DC-DC converters and power management functions, this MOSFET offers low input capacitance, fast switching speed, and low input/output leakage. It is also Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device), and qualified to AEC-Q101 Standards for High Reliability.
Product Attributes
- Brand: Diodes Incorporated
- Product Line: DMN6140L
- Compliance: Fully RoHS Compliant, Halogen and Antimony Free (Green Device), AEC-Q101 Qualified
- Material: Molded Plastic, Green Molding Compound
- Certifications: UL Flammability Classification Rating 94V-0
Technical Specifications
| Characteristic | Symbol | Value | Units | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | TA = +25C |
| RDS(on) max | 140 | m | VGS = 10V | |
| ID (TA = +25C) | 2.3 | A | ||
| RDS(on) max | 170 | m | VGS = 4.5V | |
| ID (TA = +25C) | 2.1 | A | ||
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 60 | V | @TA = +25C |
| Gate-Source Voltage | VGSS | 20 | V | @TA = +25C |
| Continuous Drain Current (Note 5) | ID | 1.6 | A | VGS = 10V, Steady State, TA = +25C |
| Continuous Drain Current (Note 5) | ID | 1.2 | A | VGS = 10V, Steady State, TA = +70C |
| Continuous Drain Current (Note 6) | ID | 2.3 | A | VGS = 10V, Steady State, TA = +25C |
| Continuous Drain Current (Note 6) | ID | 1.8 | A | VGS = 10V, Steady State, TA = +70C |
| Pulsed Drain Current (10s pulse, duty cycle = 1%) | IDM | 10 | A | @TA = +25C |
| Thermal Characteristics | ||||
| Total Power Dissipation (Note 5) | PD | 0.7 | W | TA = +25C |
| Total Power Dissipation (Note 6) | PD | 1.3 | W | TA = +25C |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 183 | C/W | Steady State |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 94 | C/W | Steady State |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0V, ID = 250A |
| Gate Threshold Voltage | VGS(th) | 1 - 3 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance | RDS(ON) | 92 - 140 | m | VGS = 10V, ID = 1.8A |
| Static Drain-Source On-Resistance | RDS(ON) | 115 - 170 | m | VGS = 4.5V, ID = 1.3A |
| Diode Forward Voltage | VSD | 0.75 - 1.0 | V | VGS = 0V, IS = 0.45A |
| Input Capacitance | Ciss | 315 | pF | VDS = 40V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 18 | pF | VDS = 40V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 16 | pF | VDS = 40V, VGS = 0V, f = 1.0MHz |
| Total Gate Charge (VGS = 10V) | Qg | 8.6 | nC | VDS = 30V, ID = 1.8A |
| Total Gate Charge (VGS = 5V) | Qg | 4.1 | nC | VDS = 30V, ID = 1.8A |
| Turn-On Delay Time | tD(on) | 2.6 | ns | VDS = 30V, VGS = 10V, RG = 6.0, ID = 1.8A |
| Turn-On Rise Time | tr | 3.6 | ns | VDS = 30V, VGS = 10V, RG = 6.0, ID = 1.8A |
| Turn-Off Delay Time | tD(off) | 16.3 | ns | VDS = 30V, VGS = 10V, RG = 6.0, ID = 1.8A |
| Turn-Off Fall Time | tf | 2.7 | ns | VDS = 30V, VGS = 10V, RG = 6.0, ID = 1.8A |
| Reverse Recovery Time | trr | 16.8 | ns | IF = 1.8A, di/dt =100A/s |
| Reverse Recovery Charge | Qrr | 9.0 | nC | IF = 1.8A, di/dt =100A/s |
| Mechanical Data | ||||
| Case | SOT23 | |||
| Weight (Approximate) | 0.0072 | grams | ||
| Ordering Information | ||||
| Part Number | Case | Packaging | ||
| DMN6140L-7 | SOT23 | 3,000/Tape & Reel | ||
| DMN6140L-13 | SOT23 | 10,000/Tape & Reel | ||
2304140030_DIODES-DMN6140L-7_C156306.pdf
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