P Channel Enhancement Mode MOSFET Diodes DMP3098LQ 7 with Low On Resistance and Fast Switching Speed
Key Attributes
Model Number:
DMP3098LQ-7
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
147pF@25V
Number:
-
Input Capacitance(Ciss):
1.008nF@25V
Pd - Power Dissipation:
1.08W
Gate Charge(Qg):
-
Mfr. Part #:
DMP3098LQ-7
Package:
SOT-23
Product Description
Product Overview
The DMP3098LQ is a new generation P-Channel Enhancement Mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high efficiency power management applications, including power management functions, analog switches, load switches, and boost switches. Key features include low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. This device is totally lead-free, fully RoHS compliant, halogen and antimony free ("Green" device), qualified to AEC-Q101 Standards for High Reliability, and PPAP Capable.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: P-Channel Enhancement Mode MOSFET
- Case Material: Molded Plastic, "Green" Molding Compound
- UL Flammability Classification: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin annealed over Copper Leadframe
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Certifications: Qualified to AEC-Q101 Standards for High Reliability, PPAP Capable
- Origin: Incorporated (Diodes Incorporated)
Technical Specifications
| Characteristic | Symbol | Value | Units | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -30 | V | VGS = 0V, ID = -250A |
| Gate-Source Voltage | VGS | ±20 | V | |
| Drain Current (Steady State, TA = +25°C) | ID | -3.8 | A | VGS = -10V |
| Drain Current (Steady State, TA = +70°C) | ID | -2.9 | A | VGS = -10V |
| Drain Current (Steady State, TA = +25°C) | ID | -3.0 | A | VGS = -4.5V |
| Pulsed Drain Current | IDM | -11 | A | Pulse width ≤10µS, Duty Cycle ≤1% |
| Total Power Dissipation | PD | 1.08 | W | Device mounted on FR-4 PCB, 2 oz. copper, 0.5 in.² pads, t ≤ 5 sec. |
| Thermal Resistance, Junction to Ambient | RθJA | 115 | °C/W | TA = +25°C |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C | |
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS = 0V, ID = -250µA |
| Zero Gate Voltage Drain Current | IDSS | -800 | nA | VDS = -30V, VGS = 0V |
| Gate-Source Leakage | IGSS | ±100 | nA | VGS = ±20V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | -1.0 to -2.1 | V | VDS = VGS, ID = -250µA |
| Static Drain-Source On-Resistance | RDS(ON) | 70 | mΩ | VGS = -10V, ID = -3.8A |
| Static Drain-Source On-Resistance | RDS(ON) | 120 | mΩ | VGS = -4.5V, ID = -3.0A |
| Forward Transfer Admittance | |Yfs| | 3.6 | S | VDS = -5V, ID = -2.7A |
| Diode Forward Voltage | VSD | -1.26 | V | VGS = 0V, IS = -2.7A |
| Input Capacitance | Ciss | 1008 | pF | VDS = -25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 210 | pF | VDS = -25V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 147 | pF | VDS = -25V, VGS = 0V, f = 1.0MHz |
| Gate Resistance | RG | 4.6 | Ω | VGS = 0V, VDS = 0V, f = 1MHz |
| Total Gate Charge | Qg | 8.0 | nC | VDS = -15V, VGS = -4.5V, ID = -3.8A |
| Total Gate Charge | Qg | 7.8 | nC | VDS = -15V, VGS = -10V, ID = -3.8A |
| Gate-Source Charge | Qgs | 1.0 | nC | VDS = -15V, VGS = -10V, ID = -3.8A |
| Gate-Drain Charge | Qgd | 2.5 | nC | VDS = -15V, VGS = -10V, ID = -3.8A |
| Turn-On Delay Time | td(on) | 12.0 | ns | VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω |
| Rise Time | tr | 10.0 | ns | VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω |
| Turn-Off Delay Time | td(off) | 35.2 | ns | VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω |
| Fall Time | tf | 19.0 | ns | VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω |
| Case | SOT23 | |||
| Weight (approximate) | 0.008 | grams | ||
| Part Number | DMP3098LQ-7 | SOT23, 3,000/Tape & Reel | ||
| SOT23 Dimensions (Min) | A | 0.37 | mm | |
| SOT23 Dimensions (Max) | A | 0.51 | mm | |
| SOT23 Dimensions (Typ) | A | 0.40 | mm | |
| SOT23 Dimensions (Min) | B | 1.20 | mm | |
| SOT23 Dimensions (Max) | B | 1.40 | mm | |
| SOT23 Dimensions (Typ) | B | 1.30 | mm | |
| SOT23 Dimensions (Min) | C | 2.30 | mm | |
| SOT23 Dimensions (Max) | C | 2.50 | mm | |
| SOT23 Dimensions (Typ) | C | 2.40 | mm | |
| SOT23 Dimensions (Min) | D | 0.89 | mm | |
| SOT23 Dimensions (Max) | D | 1.03 | mm | |
| SOT23 Dimensions (Typ) | D | 0.915 | mm | |
| SOT23 Dimensions (Min) | F | 0.45 | mm | |
| SOT23 Dimensions (Max) | F | 0.60 | mm | |
| SOT23 Dimensions (Typ) | F | 0.535 | mm | |
| SOT23 Dimensions (Min) | G | 1.78 | mm | |
| SOT23 Dimensions (Max) | G | 2.05 | mm | |
| SOT23 Dimensions (Typ) | G | 1.83 | mm | |
| SOT23 Dimensions (Min) | H | 2.80 | mm | |
| SOT23 Dimensions (Max) | H | 3.00 | mm | |
| SOT23 Dimensions (Typ) | H | 2.90 | mm | |
| SOT23 Dimensions (Min) | J | 0.013 | mm | |
| SOT23 Dimensions (Max) | J | 0.10 | mm | |
| SOT23 Dimensions (Typ) | J | 0.05 | mm | |
| SOT23 Dimensions (Min) | K | 0.890 | mm | |
| SOT23 Dimensions (Max) | K | 1.00 | mm | |
| SOT23 Dimensions (Typ) | K | 0.975 | mm | |
| SOT23 Dimensions (Min) | K1 | 0.903 | mm | |
| SOT23 Dimensions (Max) | K1 | 1.10 | mm | |
| SOT23 Dimensions (Typ) | K1 | 1.025 | mm | |
| SOT23 Dimensions (Min) | L | 0.45 | mm | |
| SOT23 Dimensions (Max) | L | 0.61 | mm | |
| SOT23 Dimensions (Typ) | L | 0.55 | mm | |
| SOT23 Dimensions (Min) | L1 | 0.25 | mm | |
| SOT23 Dimensions (Max) | L1 | 0.55 | mm | |
| SOT23 Dimensions (Typ) | L1 | 0.40 | mm | |
| SOT23 Dimensions (Min) | M | 0.085 | mm | |
| SOT23 Dimensions (Max) | M | 0.150 | mm | |
| SOT23 Dimensions (Typ) | M | 0.110 | mm | |
| SOT23 Angle | α | 8° |
1912111437_DIODES-DMP3098LQ-7_C460875.pdf
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