Surface Mount Rectifier DOWO MURS160 Featuring Fast Reverse Recovery and Epoxy Flame Retardant Package
Key Attributes
Model Number:
MURS160
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA
Non-Repetitive Peak Forward Surge Current:
60A
Reverse Recovery Time (trr):
38ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
600V
Voltage - Forward(Vf@If):
1.25V@1.0A
Current - Rectified:
1A
Mfr. Part #:
MURS160
Package:
SMB
Product Description
Product Overview
The MURS120-MURS160 series are surface mount super fast recovery rectifiers featuring glass passivated junction chips, ideal for automated placement. They offer super fast reverse recovery times and comply with RoHS standards, being halogen-free. These rectifiers are suitable for various applications requiring efficient rectification and fast switching characteristics.
Product Attributes
- Brand: DOWOSEMI
- Certifications: RoHS standard, halogen-free
- Material: Epoxy UL 94V-0 rate flame retardant
- Package: SMB/DO-214AA
- Polarity: Indicated by cathode band
- Mounting Position: Any
Technical Specifications
| Parameter | Symbol | Unit | MURS120 | MURS140 | MURS160 | Test Conditions |
| Maximum Repetitive Peak Reverse Voltage | VRRM | V | 200 | 400 | 600 | |
| Maximum RMS Voltage | VRMS | V | 140 | 280 | 420 | |
| Maximum DC Blocking Voltage | VDC | V | 200 | 400 | 600 | |
| Average Rectified Output Current @60Hz sine wave, resistance load, TL (Fig.1) | IO | A | 1.0 | |||
| Forward Surge Current (Non-repetitive) @60Hz Half-sine wave,1 cycle, Tj=25 | IFSM | A | 30 | |||
| Forward Surge Current (Non-repetitive) @1ms, square wave, 1 cycle, Tj=25 | A | 60 | ||||
| Current squared time @1mst8.3ms Tj=25 | I2t | A2s | 3.735 | |||
| Storage Temperature | Tstg | -55 ~ +150 | ||||
| Junction Temperature | Tj | -55 ~ +150 | ||||
| Maximum Instantaneous Forward Voltage | VF | V | 0.92 | 1.25 | IFM=1.0A | |
| Maximum Reverse Recovery Time | trr | ns | 25 | IF=0.5A,IR=1.0A,Irr=0.25A | ||
| Maximum DC Reverse Current at Rated DC Blocking Voltage | IR | A | 5.0 | Tj =25 | ||
| 50 | Tj =125 | |||||
| Typical Junction Capacitance | Cj | pF | 17 | 15 | 14 | Measured at 1MHz and Applied Reverse Voltage of 4.0 V.D.C |
| Typical Thermal Resistance (Junction to Ambient) | RJ-A(1) | /W | 65 | |||
| Typical Thermal Resistance (Junction to Lead) | RJ-L(1) | /W | 20 | |||
| Typical Thermal Resistance (Junction to Case) | RJ-C(1) | /W | 18 | |||
| Reverse Recovery Time | TRR | ns | - | 26 | - | Tj=25 IF=1Adi/dt=-50A/us VRM=30V |
| ns | - | 22 | - | Tj=25 IF=1A di/dt=-200A/us VRM=200V | ||
| ns | - | 31 | - | Tj=125 | ||
| Peak Recovery Current | IRRM | A | - | 2.3 | - | Tj=25 |
| A | - | 3.8 | - | Tj=125 | ||
| Reverse Recovery Charge | Qrr | nC | - | 20.2 | - | Tj=25 |
| nC | - | 43.7 | - | Tj=125 | ||
| Non-repetitive Avalanche Energy | EAS | mJ | 16.9 | - | - | Tj=25 RI =1.5 AL=15 mH |
| Reverse Recovery Time | TRR | ns | - | - | 49 | Tj=25 IF=1Adi/dt=-50A/us VRM=30V |
| ns | - | - | 38 | Tj=25 IF=1A di/dt=-200A/us VRM=400V | ||
| ns | - | - | 59 | Tj=125 | ||
| Peak Recovery Current | IRRM | A | - | - | 3.5 | Tj=25 |
| A | - | - | 5.5 | Tj=125 | ||
| Reverse Recovery Charge | Qrr | nC | - | - | 67.4 | Tj=25 |
| nC | - | - | 160.5 | Tj=125 | ||
| Non-repetitive Avalanche Energy | EAS | mJ | - | - | 1.9 | Tj=25 R=0.5A I L=15 mH |
Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad areas
2410121737_DOWO-MURS160_C22374744.pdf
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