High voltage N channel MOSFET DIODES DMN60H080DS 13 designed for motor control and switching circuits
Key Attributes
Model Number:
DMN60H080DS-13
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
70mA
RDS(on):
67Ω@10V,60mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
1.4pF
Number:
1 N-channel
Input Capacitance(Ciss):
25pF
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
1.7nC@10V
Mfr. Part #:
DMN60H080DS-13
Package:
SOT-23
Product Description
Product Overview
The DMN60H080DS is a new generation N-channel enhancement mode Field-Effect MOSFET utilizing advanced planar technology. It offers excellent high voltage and fast switching capabilities, making it an ideal choice for small-signal and level shift applications. This device is designed for various applications including motor controls, backlighting, DC-DC converters, and power-management functions. Key features include low input capacitance, a high BVDSS rating for power applications, and low input/output leakage. The DMN60H080DS is Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free, and classified as a Green Device.
Product Attributes
- Brand: Diodes Incorporated
- Technology: Advanced Planar Technology MOSFET
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Material: Molded Plastic Green Molding Compound
- Flame Classification: UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin Annealed over Copper Leadframe
- Solderability: Solderable per MIL-STD-202, Method 208
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | 600 | V | VGS = 0V, ID = 250A |
| Gate-Source Voltage | VGSS | 20 | V | |
| Continuous Drain Current (Note 5) | ID | 70 | mA | VGS = 10V, Steady State, TA = +25C |
| Continuous Drain Current (Note 6) | ID | 80 | mA | VGS = 10V, Steady State, TA = +25C |
| Static Drain-Source On-Resistance | RDS(ON) | 100 | VGS = 10V, ID = 60mA | |
| Gate Threshold Voltage | VGS(TH) | 1.5 - 3.0 | V | VDS = VGS, ID = 250A |
| Input Capacitance | Ciss | 25 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 5.2 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 1.4 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Total Gate Charge | Qg | 1.7 | nC | VGS = 10V, VDD = 300V, ID = 0.01A |
| Package | SOT23 | |||
| Weight | 0.008 | grams (Approximate) | ||
| Part Number | DMN60H080DS-7 | SOT23, 3000 Tape & Reel | ||
| Part Number | DMN60H080DS-13 | SOT23, 10000 Tape & Reel |
2412251142_DIODES-DMN60H080DS-13_C6934856.pdf
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