PowerDI5060 8 Package 100V N Channel MOSFET Diodes DMT10H010LPS 13 for Cooler Running and Switching
Key Attributes
Model Number:
DMT10H010LPS-13
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
98A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.9V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
44pF
Number:
1 N-channel
Output Capacitance(Coss):
764pF
Input Capacitance(Ciss):
4.166nF
Pd - Power Dissipation:
139W
Gate Charge(Qg):
58.4nC@10V
Mfr. Part #:
DMT10H010LPS-13
Package:
PowerDI-5060-8
Product Description
Product Overview
The Diodes Incorporated DMT10H010LPS is a 100V N-Channel Enhancement Mode MOSFET designed for high efficiency and superior switching performance. It minimizes RDS(ON) to reduce on-state losses and is ideal for notebook battery power management and load switch applications. This device features a thermally efficient PowerDI5060-8 package, making it suitable for thin applications and cooler-running designs.
Product Attributes
- Brand: Diodes Incorporated
- Package Type: PowerDI5060-8
- Material: Molded Plastic, "Green" Molding Compound
- Certifications: RoHS Compliant, Halogen and Antimony Free ("Green" Device), Qualified to JEDEC standards
- Lead Finish: Matte Tin Annealed over Copper Leadframe
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | - | - | V | VGS = 0V, ID = 1mA |
| Zero Gate Voltage Drain Current | IDSS | - | - | 1 | A | VDS = 80V, VGS = 0V |
| Gate-Source Leakage | IGSS | - | - | 100 | nA | VGS = 20V, VDS = 0V |
| Gate Threshold Voltage | VGS(TH) | 1.4 | 1.9 | 3.0 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance | RDS(ON) | - | 6.9 | 8.3 | m | VGS = 10V, ID = 13A |
| Static Drain-Source On-Resistance | RDS(ON) | - | 7.5 | 12 | m | VGS = 6V, ID = 13A |
| Static Drain-Source On-Resistance | RDS(ON) | - | 10 | 20 | m | VGS = 4.5V, ID = 5A |
| Diode Forward Voltage | VSD | - | 0.8 | 1.3 | V | VGS = 0V, IS = 13A |
| Input Capacitance | Ciss | - | 4166 | - | pF | VDS = 50V, VGS = 0V, f = 1MHz |
| Output Capacitance | Coss | - | 764 | - | pF | VDS = 50V, VGS = 0V, f = 1MHz |
| Reverse Transfer Capacitance | Crss | - | 44 | - | pF | VDS = 50V, VGS = 0V, f = 1MHz |
| Gate Resistance | Rg | - | 2 | - | VDS = 0V, VGS = 0V, f = 1MHz | |
| Total Gate Charge | Qg | - | 58.4 | - | nC | VDD = 50V, ID = 13A, VGS = 10V |
| Gate-Source Charge | Qgs | - | 11.4 | - | nC | VDD = 50V, ID = 13A, VGS = 10V |
| Gate-Drain Charge | Qg d | - | 14.2 | - | nC | VDD = 50V, ID = 13A, VGS = 10V |
| Turn-On Delay Time | tD(ON) | - | 11.6 | - | ns | VDD = 50V, VGS = 10V, ID = 13A, Rg = 6 |
| Turn-On Rise Time | tR | - | 14.1 | - | ns | VDD = 50V, VGS = 10V, ID = 13A, Rg = 6 |
| Turn-Off Delay Time | tD(OFF) | - | 42.9 | - | ns | VDD = 50V, VGS = 10V, ID = 13A, Rg = 6 |
| Turn-Off Fall Time | tF | - | 22 | - | ns | VDD = 50V, VGS = 10V, ID = 13A, Rg = 6 |
| Reverse Recovery Time | tRR | - | 49.8 | - | ns | IF = 13A, di/dt = 100A/s |
| Reverse Recovery Charge | QRR | - | 85.1 | - | nC | IF = 13A, di/dt = 100A/s |
| Continuous Drain Current | ID | - | 98 | - | A | VGS = 10V, TC = +25C (Note 8) |
| Continuous Drain Current | ID | - | 62 | - | A | VGS = 10V, TC = +100C (Note 8) |
| Continuous Drain Current | ID | - | 14 | - | A | VGS = 10V, TA = +25C (Note 5) |
| Continuous Drain Current | ID | - | 11 | - | A | VGS = 10V, TA = +70C (Note 5) |
| Pulsed Drain Current | IDM | - | 250 | - | A | (10s Pulse, Duty Cycle = 1%) |
| Maximum Continuous Body Diode Forward Current | IS | - | 110 | - | A | - |
| Pulsed Body Diode Current | ISM | - | 250 | - | A | (10s Pulse, Duty Cycle = 1%) |
| Avalanche Current | IAS | - | 10 | - | A | (Note 7), L = 3mH |
| Avalanche Energy | EAS | - | 150 | - | mJ | (Note 7), L = 3mH |
| Total Power Dissipation | PD | - | 139 | - | W | TC = +25C (Note 8) |
| Total Power Dissipation | PD | - | 3 | - | W | (Note 5) |
| Thermal Resistance, Junction to Case | RJC | - | 0.9 | - | C/W | (Note 8) |
| Thermal Resistance, Junction to Ambient | RJA | - | 49 | - | C/W | (Note 5) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | - | +150 | C | - |
| Package Dimensions (PowerDI5060-8) | A | 0.90 | 1.00 | 1.10 | mm | - |
| Package Dimensions (PowerDI5060-8) | A1 | 0.00 | - | 0.05 | mm | - |
| Package Dimensions (PowerDI5060-8) | b | 0.33 | 0.41 | 0.51 | mm | - |
| Package Dimensions (PowerDI5060-8) | D | - | 5.15 | - | mm (BSC) | - |
| Package Dimensions (PowerDI5060-8) | E | - | 6.15 | - | mm (BSC) | - |
| Weight (Approximate) | - | - | 0.097 | - | grams | - |
Applications
- Motor controls
- DC-DC converters
- Power managements
- Notebook battery power management
- Load switch
2412251119_DIODES-DMT10H010LPS-13_C530905.pdf
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