switching P channel MOSFET DIODES DMG2305UX 7 designed for power management and motor control circuits

Key Attributes
Model Number: DMG2305UX-7
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
52mΩ@4.5V;100mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 P-Channel
Output Capacitance(Coss):
85pF
Input Capacitance(Ciss):
808pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
10.2nC@4.5V
Mfr. Part #:
DMG2305UX-7
Package:
SOT-23
Product Description

Product Overview

The DMG2305UX is a P-channel enhancement mode MOSFET designed to achieve minimal on-state resistance (RDS(on)) while maintaining superior switching performance. This makes it an ideal component for high-efficiency power management applications, including backlighting, power management functions, DC-DC converters, and motor controls. It features low on-resistance, low input capacitance, and fast switching speeds.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: P-CHANNEL ENHANCEMENT MODE MOSFET
  • Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
  • Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0
  • Terminals Finish: Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Automotive Option: An Automotive-Compliant Part is Available Under Separate Datasheet (DMG2305UXQ)

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Breakdown Voltage BVDSS -20 V VGS = 0V, ID = -250A
Gate Threshold Voltage VGS(th) -0.5 to -0.9 V VDS = VGS, ID = -250A
Static Drain-Source On-Resistance RDS(on) 40 (Typ), 52 (Max) m VGS = -4.5V, ID = -4.2A
52 (Typ), 100 (Max) m VGS = -2.5V, ID = -3.4A
Continuous Drain Current ID -4.2 (TA = +25C) / -3.3 (TA = +70C) A VGS = -4.5V, Steady State
Continuous Drain Current ID -5.0 (TA = +25C) / -4.0 (TA = +70C) A VGS = -4.5V, t<10s
Pulsed Drain Current IDM -15 A 10s Pulse, Duty Cycle = 1%
Power Dissipation PD 1.4 W Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate
Thermal Resistance, Junction to Ambient RJA 90 (Steady State) / 64 (t<10s) C/W Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate
Thermal Resistance, Junction to Case RJC 33 C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Input Capacitance Ciss 808 (Typ) pF VDS = -15V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 85 (Typ) pF VDS = -15V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 77 (Typ) pF VDS = -15V, VGS = 0V, f = 1.0MHz
Total Gate Charge Qg 10.2 (Typ) nC VGS = -4.5V, VDS = -4V, ID = -3.5A
Package SOT23 (Standard)
Weight 0.009 (Approximate) grams
Packaging 3,000/Tape & Reel (DMG2305UX-7)
10,000/Tape & Reel (DMG2305UX-13)

2412251003_DIODES-DMG2305UX-7_C150470.pdf

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