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quality Diodes 2N7002K 7 N channel MOSFET with matte tin terminals and solderable per MIL STD 202 method 208 factory
quality Diodes 2N7002K 7 N channel MOSFET with matte tin terminals and solderable per MIL STD 202 method 208 factory

Diodes 2N7002K 7 N channel MOSFET with matte tin terminals and solderable per MIL STD 202 method 208

Key Attributes
Model Number: 2N7002K-7
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
380mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.2Ω@10V;1.4Ω@5V
Gate Threshold Voltage (Vgs(th)):
1.6V@1mA
Reverse Transfer Capacitance (Crss@Vds):
2.9pF
Number:
1 N-channel
Output Capacitance(Coss):
4.2pF
Input Capacitance(Ciss):
30pF
Pd - Power Dissipation:
540mW
Gate Charge(Qg):
300pC@4.5V
Mfr. Part #:
2N7002K-7
Package:
SOT-23
Product Description

Product Overview

The Diodes Incorporated 2N7002K is an N-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it an ideal component for high-efficiency power-management applications, including motor controls and backlighting. Key features include low input capacitance, fast switching speed, low input/output leakage, and ESD protection up to 2kV. This device is also Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device), and qualified to JEDEC standards for High Reliability.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: N-CHANNEL ENHANCEMENT MODE MOSFET
  • Package: SOT23 (Standard)
  • Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208
  • Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device), Qualified to JEDEC standards (as references in AEC-Q) for High Reliability.
  • ESD Protection: Up to 2kV

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Voltage BVDSS 60 V VGS = 0V, ID = 10A
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Steady State, TA = +25C) ID 380 mA VGS = 10V
Continuous Drain Current (Steady State, TA = +70C) ID 300 mA VGS = 10V
Continuous Drain Current (Steady State, TA = +25C) ID 310 mA VGS = 5V
Continuous Drain Current (Steady State, TA = +70C) ID 240 mA VGS = 5V
Static Drain-Source On-Resistance (Max) RDS(ON) 2 VGS = 10V
Static Drain-Source On-Resistance (Max) RDS(ON) 3 VGS = 5V
Total Power Dissipation (Note 5) PD 370 mW
Total Power Dissipation (Note 6) PD 540 mW
Weight 0.008 grams (Approximate)
Gate Threshold Voltage (Typ) VGS(TH) 1.6 V VDS = 10V, ID = 1mA
Input Capacitance (Typ) Ciss 30 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance (Typ) Coss 4.2 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance (Typ) Crss 2.9 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Total Gate Charge (Typ) Qg 0.3 nC VGS = 4.5V, VDS = 10V, ID = 250mA
Turn-On Delay Time (Typ) tD(ON) 3.9 ns VDD = 30V, VGS = 10V, RG = 25, ID = 200mA
Turn-On Rise Time (Typ) tR 3.4 ns VDD = 30V, VGS = 10V, RG = 25, ID = 200mA
Turn-Off Delay Time (Typ) tD(OFF) 15.7 ns VDD = 30V, VGS = 10V, RG = 25, ID = 200mA
Turn-Off Fall Time (Typ) tF 9.9 ns VDD = 30V, VGS = 10V, RG = 25, ID = 200mA
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Ordering Information Part Number Package Packing Qty.
2N7002K-7 SOT23 (Standard) Tape & Reel 3,000
2N7002K-13 SOT23 (Standard) Tape & Reel 10,000

2412251154_DIODES-2N7002K-7_C85047.pdf

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