Power DIODES DMG1012T-7 N channel enhancement mode MOSFET with low input capacitance and ESD protection
Key Attributes
Model Number:
DMG1012T-7
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
630mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
300mΩ@4.5V;400mΩ@2.5V;500mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
5.37pF
Number:
1 N-channel
Output Capacitance(Coss):
9.68pF
Input Capacitance(Ciss):
60.67pF
Pd - Power Dissipation:
280mW
Gate Charge(Qg):
736.6pC@4.5V
Mfr. Part #:
DMG1012T-7
Package:
SOT-523
Product Description
Product Overview
The Diodes Incorporated DMG1012T is an N-channel enhancement mode MOSFET designed for efficient power management. It features low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speeds, making it suitable for various electronic applications. This device offers low input/output leakage and is ESD protected up to 2kV. It is also Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free, and designated as a Green Device. For automotive applications requiring specific change control, please contact Diodes Incorporated or your local representative.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: N-Channel Enhancement Mode MOSFET
- Package: SOT523
- Package Material: Molded Plastic, Green Molding Compound
- UL Flammability Classification: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals Finish: Matte Tin Annealed over Alloy 42 Lead-Frame
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- ESD Protection: Up to 2kV
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition | ||
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 20 | V | @ TA = +25C, unless otherwise specified. | ||
| Gate-Source Voltage | VGSS | 6 | V | @ TA = +25C, unless otherwise specified. | ||
| Continuous Drain Current (Note 6) | ID | 0.63 (TA = +25C) / 0.45 (TA = +85C) | A | @ TA = +25C, unless otherwise specified. | ||
| Pulsed Drain Current | IDM | 3 | A | @ TA = +25C, unless otherwise specified. | ||
| Thermal Characteristics | ||||||
| Total Power Dissipation (Note 6) | PD | 0.28 | W | @ TA = +25C, unless otherwise specified. | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 452 | C/W | @ TA = +25C, unless otherwise specified. | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | @ TA = +25C, unless otherwise specified. | ||
| Electrical Characteristics | ||||||
| OFF CHARACTERISTICS (Note 7) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250A | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | nA | VDS = 20V, VGS = 0V, TJ = +25C | ||
| Gate-Source Leakage | IGSS | 1.0 | A | VGS = 4.5V, VDS = 0V | ||
| ON CHARACTERISTICS (Note 7) | ||||||
| Gate Threshold Voltage | VGS(TH) | 0.5 | 1.0 | V | VDS = VGS, ID = 250A | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.3 | 0.4 | VGS = 4.5V, ID = 600mA | ||
| 0.4 | 0.5 | VGS = 2.5V, ID = 500mA | ||||
| 0.5 | 0.7 | VGS = 1.8V, ID = 350mA | ||||
| Forward Transfer Admittance | |Yfs| | 1.4 | S | VDS = 10V, ID = 400mA | ||
| Diode Forward Voltage | VSD | 0.7 | 1.2 | V | VGS = 0V, IS = 150mA | |
| DYNAMIC CHARACTERISTICS (Note 8) | ||||||
| Input Capacitance | Ciss | 60.67 | pF | VDS = 16V, VGS = 0V, f = 1.0MHz | ||
| Output Capacitance | Coss | 9.68 | pF | VDS = 16V, VGS = 0V, f = 1.0MHz | ||
| Reverse Transfer Capacitance | Crss | 5.37 | pF | VDS = 16V, VGS = 0V, f = 1.0MHz | ||
| Total Gate Charge | Qg | 736.6 | pC | VGS = 4.5V, VDS = 10V, ID = 250mA | ||
| Gate-Source Charge | Qgs | 93.6 | pC | VGS = 4.5V, VDS = 10V, ID = 250mA | ||
| Gate-Drain Charge | Qgd | 116.6 | pC | VGS = 4.5V, VDS = 10V, ID = 250mA | ||
| Turn-On Delay Time | tD(ON) | 5.1 | ns | VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA | ||
| Turn-On Rise Time | tR | 7.4 | ns | VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA | ||
| Turn-Off Delay Time | tD(OFF) | 26.7 | ns | VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA | ||
| Turn-Off Fall Time | tF | 12.3 | ns | VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA | ||
| Ordering Information | ||||||
| Part Number | Qualification | Package | Packing | Qty. | ||
| DMG1012T-7 | Commercial | SOT523 | Tape & Reel | 3000 | ||
| DMG1012T-13 | Commercial | SOT523 | Tape & Reel | 10000 | ||
2412251025_DIODES-DMG1012T-7_C20512.pdf
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