Small signal switching diode DIOTEC 1N4148WS designed for fast switching and low leakage current in electronics
Key Attributes
Model Number:
1N4148WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
1A
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
Independent
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
300mA
Mfr. Part #:
1N4148WS
Package:
SOD-323
Product Description
Product Overview
The 1N4148WS and 1N4448WS are SMD small signal switching diodes designed for high-speed switching applications. They offer very fast switching speeds, low junction capacitance, and low leakage current, making them ideal for signal processing and general high-speed switching tasks in commercial-grade applications. These diodes are compliant with RoHS, REACH, and Conflict Minerals regulations.
Product Attributes
- Brand: Diotec Semiconductor AG
- Case Material: UL 94V-0
- Certifications: Compliant to RoHS, REACH, Conflict Minerals
- Packaging: Taped and reeled (3000 / 7")
- Environmental Compliance: Pb FREE, Halogen FREE
Technical Specifications
| Model | Type Code | Dimensions (mm) | IFAV (mA) | VF (V) | VRRM (V) | trr (ns) | Weight (g) | Ptot (mW) | IFSM (A) | Tjmax (C) |
|---|---|---|---|---|---|---|---|---|---|---|
| 1N4148WS | W2 or A | 1.25 0.1 x 1 0.1 x 2.5 0.2 | 150 | < 0.715 (at 1 mA) / < 0.855 (at 10 mA) | 100 | < 4 | approx. 0.005 | 200 | 1 (tp 1 s) | 150 |
| 1N4448WS | W2 | 1.25 0.1 x 1 0.1 x 2.5 0.2 | 150 | < 0.855 (at 5 mA) / < 1.0 (at 50 mA) | 100 | < 4 | approx. 0.005 | 200 | 1 (tp 1 s) | 150 |
| Maximum Ratings (TA = 25C unless otherwise specified) | ||||||||||
| Power dissipation | Ptot = 200 mW | |||||||||
| Max. average forward current | IFAV = 150 mA | |||||||||
| Repetitive peak forward current | IFRM = 300 mA | |||||||||
| Non repetitive peak forward surge current (tp 1 s) | IFSM = 350 mA | |||||||||
| Reverse voltage | VR = 75 V | |||||||||
| Repetitive peak reverse voltage | VRRM = 100 V | |||||||||
| Junction temperature | Tj = -55...+150C | |||||||||
| Storage temperature | TS = -55...+150C | |||||||||
| Characteristics (TA = 25C unless otherwise specified) | ||||||||||
| Forward voltage (1N4148WS) | IF = 1 mA: VF < 0.715 V; IF = 5 mA: VF < 0.855 V; IF = 10 mA: VF < 1.0 V; IF = 50 mA: VF < 1.25 V | |||||||||
| Forward voltage (1N4448WS) | IF = 1 mA: VF = 0.62...0.72 V; IF = 5 mA: VF < 0.855 V; IF = 10 mA: VF < 1.0 V; IF = 50 mA: VF < 1.25 V | |||||||||
| Leakage current (Tj = 25C) | VR = 20 V: IR < 25 nA; VR = 75 V: IR < 1 A (1N4148WS) / IR < 100 nA (1N4448WS) | |||||||||
| Leakage current (Tj = 125C) | VR = 20 V: IR < 30 A; VR = 75 V: IR < 50 A | |||||||||
| Junction capacitance (VR = 0 V, f = 1 MHz) | CT = typ. 2 pF | |||||||||
| Reverse recovery time | trr < 4 ns | |||||||||
| Thermal resistance junction to ambient | RthA < 620 K/W | |||||||||
| Solder & assembly conditions | 260C / 10s, MSL = 1 | |||||||||
Alternative Case Outlines: DO-35, MiniMELF, Q-MiniMELF, Q-MicroMELF, SOD-123F
Alternative Types:
- 1N4148 / LL4148 / LS4148 / MCL4148
- 1N4448 / LL4448 / LS4448 / MCL4448
- 1N4148W / 1N4448W
2410010333_DIOTEC-1N4148WS_C212832.pdf
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