N Channel Enhancement Mode MOSFET DIODES 2N7002KQ 13 with RoHS Compliance and Lead Free Construction

Name: N Channel Enhancement Mode MOSFET DIODES 2N7002KQ 13 with RoHS Compliance and Lead Free Construction
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: 2N7002KQ-13
Availability: InStock

Key Attributes

Model Number: 2N7002KQ-13

Product Custom Attributes

Drain To Source Voltage:

60V

Current - Continuous Drain(Id):

380mA

Operating Temperature -:

-55℃~+150℃

RDS(on):

2Ω@10V

Gate Threshold Voltage (Vgs(th)):

2.5V

Reverse Transfer Capacitance (Crss@Vds):

5pF@25V

Number:

1 N-channel

Output Capacitance(Coss):

4.2pF

Input Capacitance(Ciss):

50pF@25V

Pd - Power Dissipation:

370mW

Gate Charge(Qg):

300pC@10V

Mfr. Part #:

2N7002KQ-13

Package:

SOT-23

Product Description

Product Overview

The 2N7002K is a new N-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high efficiency power management applications, including motor control and general power management functions. Key features include low input capacitance, fast switching speed, low input/output leakage, and ESD protection up to 2kV. The device is also Totally Lead-Free, fully RoHS compliant, and Halogen and Antimony free, designated as a Green device.

Product Attributes

Brand: Diodes Incorporated
Product Type: N-Channel Enhancement Mode MOSFET
Case Material: Molded Plastic, Green Molding Compound
UL Flammability Classification: 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish: Matte Tin Annealed over Alloy 42 Leadframe
Compliance: Totally Lead-Free, Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
ESD Protection: Up to 2kV
Qualification: Qualified to JEDEC standards for High Reliability

Technical Specifications

Characteristic	Symbol	Value	Unit	Test Condition
Drain-Source Voltage	BVDSS	60	V	VGS = 0V, ID = 10A
Gate-Source Voltage	VGSS	20	V
Continuous Drain Current (TA = +25C)	ID	380	mA	VGS = 10V, Steady State
Continuous Drain Current (TA = +25C)	ID	310	mA	VGS = 5V, Steady State
Static Drain-Source On-Resistance (Max)	RDS(ON)	2.0		VGS = 10V, ID = 0.5A
Static Drain-Source On-Resistance (Max)	RDS(ON)	3.0		VGS = 5V, ID = 0.05A
Total Power Dissipation (Note 5)	PD	370	mW
Total Power Dissipation (Note 6)	PD	540	mW
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	C
Case		SOT23 (Standard)
Weight		0.008	grams (Approximate)
Input Capacitance	Ciss	30-50	pF	VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance	Coss	4.2-25	pF	VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance	Crss	2.9-5.0	pF	VDS = 25V, VGS = 0V, f = 1.0MHz
Total Gate Charge	Qg	0.3	nC	VGS = 4.5V, VDS = 10V, ID = 250mA

Ordering Information

Part Number	Case	Packaging
2N7002K-7	SOT23 (Standard)	3,000/Tape & Reel
2N7002K-13	SOT23 (Standard)	10,000/Tape & Reel

Package Outline Dimensions (SOT23 - Standard)

Dim	Min	Max	Typ
A	0.90	1.15	1.025
A1	0.00	0.10	0.05
A2	0.85	1.10	0.975
b	0.30	0.51	0.40
c	0.080	0.202	0.11
D	2.80	3.00	2.90
E	2.25	2.55	2.40
E1	1.20	1.40	1.30
e	0.89	1.03	0.915
e1	1.78	2.05	1.83
F	0.40	0.60	0.535
L1	0.45	0.61	0.55
L	0.25	0.55	0.40
a	0	8	--

Suggested Pad Layout (SOT23 - Standard)

Dimensions	Value (in mm)
C	2.0
X	0.8
X1	1.35
Y	0.9
Y1	2.9

2412251117_DIODES-2N7002KQ-13_C526325.pdf

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