P Channel Enhancement Mode MOSFET DOWO AO3401PSA with Low Gate Leakage and Excellent Package Design
Key Attributes
Model Number:
AO3401PSA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
RDS(on):
65mΩ@10V,4.1A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 P-Channel
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
780pF
Mfr. Part #:
AO3401PSA
Package:
SOT-23
Product Description
Product Overview
The AO3401PSA is a P-Channel Enhancement Mode Power MOSFET designed for power switching applications. It features an excellent package for good heat dissipation and a high-density cell design for ultra-low RDS(on). This MOSFET is suitable for hard-switched and high-frequency circuits, including uninterruptible power supplies.
Product Attributes
- Marking Code: R1
- Brand: Dowosemi
- Origin: China
- Model: AO3401PSA
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-30V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | -VGS(th) | VDS=VGS,ID=-250A | 0.7 | 0.9 | 1.3 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-10V,ID=-4.1A | -- | 48 | 65 | m |
| VGS=-4.5V,ID=-3A | -- | 56 | 85 | m | ||
| Forward Transconductance | gFS | VDS=-5V,ID=-4.1A | -- | 10 | -- | S |
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f=1MHz | -- | 780 | -- | pF |
| Output Capacitance | Coss | VDS=-15V,VGS=0V,f=1MHz | -- | 80 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V,f=1MHz | -- | 65 | -- | pF |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 6.5 | -- | |
| Turn-on Delay Time | td(on) | VDD=- 15V,ID=-4.1A, VGS=-10V,RG=6 | -- | 7 | -- | nS |
| Turn-on Rise Time | tr | VDD=- 15V,ID=-4.1A, VGS=-10V,RG=6 | -- | 3 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=- 15V,ID=-4.1A, VGS=-10V,RG=6 | -- | 30 | -- | nS |
| Turn-off Fall Time | tf | VDD=- 15V,ID=-4.1A, VGS=-10V,RG=6 | -- | 12 | -- | nS |
| Total Gate Charge | Qg | VDS=-15V, ID= -4.1A,VGS=-4.5V | -- | 8.5 | -- | nC |
| Gate-Source Charge | Qgs | VDS=-15V, ID= -4.1A,VGS=-4.5V | -- | 1.8 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=-15V, ID= -4.1A,VGS=-4.5V | -- | 2.7 | -- | nC |
| Diode Forward Voltage | -VSD | VGS=0V,IS=-4.1A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | VGS=0V,IS=-4.1A | -- | -- | 4.1 | A |
2410122022_DOWO-AO3401PSA_C5456621.pdf
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