SOT23 package MOSFET DIODES ZXMN3B01FTA optimized for DC DC converters and motor control applications
Key Attributes
Model Number:
ZXMN3B01FTA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Output Capacitance(Coss):
50pF
Input Capacitance(Ciss):
258pF
Pd - Power Dissipation:
625mW
Gate Charge(Qg):
2.93nC@4.5V
Mfr. Part #:
ZXMN3B01FTA
Package:
SOT-23
Product Description
Product Overview
This new generation of Trench MOSFETs from Zetex, the ZXMN3B01F, offers a unique structure combining low on-resistance with fast switching speeds. Ideal for high efficiency, low voltage power management applications, it features a low threshold and low gate drive, making it suitable for DC-DC converters, power management functions, disconnect switches, and motor control. Available in a SOT23 package.
Product Attributes
- Brand: Zetex
- Package: SOT23
- Mode: N-Channel Enhancement Mode
- Gate Drive: 2.5V
Technical Specifications
| Parameter | Symbol | Value/Limit | Unit | Conditions |
|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | |
| Gate-Source Voltage | VGS | ±12 | V | |
| Continuous Drain Current @ VGS=4.5V; TA=25°C | ID | 2.0 | A | (b) |
| Continuous Drain Current @ VGS=4.5V; TA=70°C | ID | 1.6 | A | (b) |
| Continuous Drain Current @ VGS=4.5V; TA=25°C | ID | 1.7 | A | (a) |
| Pulsed Drain Current | IDM | 9.4 | A | (c) |
| Continuous Source Current (Body Diode) | IS | 1.3 | A | (b) |
| Pulsed Source Current (Body Diode) | ISM | 9.4 | A | (c) |
| Power Dissipation at TA =25°C | PD | 625 | mW | (a) |
| Linear Derating Factor | 5 | mW/°C | (a) | |
| Power Dissipation at TA =25°C | PD | 806 | mW | (b) |
| Linear Derating Factor | 6.4 | mW/°C | (b) | |
| Operating and Storage Temperature Range | Tj, Tstg | -55 to +150 | °C | |
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | ID=250 µA, VGS=0V |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=30V, VGS=0V |
| Gate-Body Leakage | IGSS | 100 | nA | VGS= ±12V, VDS=0V |
| Gate-Source Threshold Voltage | VGS(th) | 0.7 | V | ID=250 µA, VDS= VGS |
| Static Drain-Source On-State Resistance | RDS(on) | 0.150 | Ω | VGS=4.5V, ID=1.7A |
| Static Drain-Source On-State Resistance | RDS(on) | 0.240 | Ω | VGS=2.5V, ID=1.2A |
| Forward Transconductance | gfs | 4 | S | VDS=15V,ID=1.7A |
| Input Capacitance | Ciss | 258 | pF | VDS= 15V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 50 | pF | VDS= 15V, VGS=0V, f=1MHz |
| Reverse Transfer Capacitance | Crss | 30 | pF | VDS= 15V, VGS=0V, f=1MHz |
| Turn-On Delay Time | td(on) | 2.69 | ns | VDD= 15V, VGS= 4.5V, ID=1A, RG≅6.0 Ω |
| Rise Time | tr | 3.98 | ns | VDD= 15V, VGS= 4.5V, ID=1A, RG≅6.0 Ω |
| Turn-Off Delay Time | td(off) | 8 | ns | VDD= 15V, VGS= 4.5V, ID=1A, RG≅6.0 Ω |
| Fall Time | tf | 5.27 | ns | VDD= 15V, VGS= 4.5V, ID=1A, RG≅6.0 Ω |
| Total Gate Charge | Qg | 2.93 | nC | VDS=15V,VGS= 4.5V, ID=1.7A |
| Gate-Source Charge | Qgs | 0.57 | nC | VDS=15V,VGS= 4.5V, ID=1.7A |
| Gate-Drain Charge | Qgd | 0.92 | nC | VDS=15V,VGS= 4.5V, ID=1.7A |
| Diode Forward Voltage | VSD | 0.85 | V | TJ=25°C, IS= 1.7A, VGS=0V |
| Diode Forward Voltage | VSD | 0.95 | V | TJ=25°C, IS= 1.7A, VGS=0V |
| Reverse Recovery Time | trr | 10.85 | ns | TJ=25°C, IF= 1.3A, di/dt= 100A/s |
| Reverse Recovery Charge | Qrr | 5 | nC | TJ=25°C, IF= 1.3A, di/dt= 100A/s |
| Device Marking | 3B1 ZXMN3B01F | |||
| Reel Size | 7” / 13” | |||
| Tape Width | 8mm | |||
| Quantity per Reel | 3000 / 10000 | units |
1809081633_DIODES-ZXMN3B01FTA_C212304.pdf
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