DIODES DMP3099L 7 P Channel MOSFET Offering Fast Switching Speed and Low Input Output Leakage Current

Key Attributes
Model Number: DMP3099L-7
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
99mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
41pF@25V
Number:
-
Input Capacitance(Ciss):
563pF@25V
Pd - Power Dissipation:
1.08W
Gate Charge(Qg):
11nC@10V
Mfr. Part #:
DMP3099L-7
Package:
SOT-23
Product Description

Product Overview

The DMP3099L is a P-Channel Enhancement Mode MOSFET designed to minimize on-state resistance (RDS(on)) while maintaining superior switching performance. This makes it an ideal component for high-efficiency power management applications, including backlighting, general power management functions, and DC-DC converters. Key features include low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. The device is Totally Lead-Free & Fully RoHS compliant, Halogen and Antimony Free, and designated as a Green Device.

Product Attributes

  • Brand: Diodes Incorporated
  • Compliance: Totally Lead-Free & Fully RoHS compliant, Halogen and Antimony Free (Green Device)
  • Material: Molded Plastic, Green Molding Compound
  • Flammability Classification: UL 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Finish: Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208

Technical Specifications

Characteristic Symbol Value Units Test Condition
Product Number DMP3099L
Drain-Source Voltage V(BR)DSS -30 V
RDS(on) max @ VGS = -10V RDS(on) max 65 m VGS = -10V
RDS(on) max @ VGS = -4.5V RDS(on) max 99 m VGS = -4.5V
ID max @ TA = +25C (VGS = -10V) ID max -3.8 A TA = +25C, VGS = -10V
ID max @ TA = +25C (VGS = -4.5V) ID max -3.0 A TA = +25C, VGS = -4.5V
Case SOT23 (Standard)
Weight 0.008 grams (approximate)
Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250A
Zero Gate Voltage Drain Current IDSS nA VDS = -30V, VGS = 0V
Gate-Source Leakage IGSS nA VGS = 20V, VDS = 0V
Gate Threshold Voltage VGS(th) -1.0 V VDS = VGS, ID = -250A
Static Drain-Source On-Resistance RDS(on) 65 / 99 m VGS = -10V, ID = -3.8A / VGS = -4.5V, ID = -3.0A
Forward Transfer Admittance |Yfs| S VDS = -5V, ID = -2.7A
Diode Forward Voltage VSD V VGS = 0V, IS = -2.7A
Input Capacitance Ciss pF VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss pF VDS = -25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss pF VDS = -25V, VGS = 0V, f = 1.0MHz
Gate Resistance RG VGS = 0V, VDS = 0V, f = 1MHz
Total Gate Charge Qg nC VDS = -15V, VGS = -4.5V, ID = -3.8A
Gate-Source Charge Qgs nC VDS = -15V, VGS = -10V, ID = -3.8A
Gate-Drain Charge Qgd nC VDS = -15V, VGS = -10V, ID = -3.8A
Turn-On Delay Time td(on) ns VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0
Rise Time tr ns VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0
Turn-Off Delay Time td(off) ns VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0
Fall Time tf ns VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0
Total Power Dissipation PD 1.08 W Note 5
Thermal Resistance, Junction to Ambient RJA 115 C/W @TA = +25C, Note 5
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Ordering Information (Part Number) DMP3099L-7 Standard SOT23 (Standard) 3000/Tape & Reel
Ordering Information (Part Number) DMP3099L-13 Standard SOT23 (Standard) 10000/Tape & Reel

2412251006_DIODES-DMP3099L-7_C155244.pdf

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