AEC Q101 Qualified Dual P Channel Transistor DIODES DMP3056LSDQ 13 for Automotive and DC DC Converter
Key Attributes
Model Number:
DMP3056LSDQ-13
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@10V;65mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
92pF
Number:
2 P-Channel
Output Capacitance(Coss):
114pF
Input Capacitance(Ciss):
722pF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
6.8nC@4.5V;13.7nC@10V
Mfr. Part #:
DMP3056LSDQ-13
Package:
SO-8
Product Description
Product Overview
The DIODES DMP3056LSDQ is a new generation dual P-Channel enhancement mode field-effect transistor designed for high efficiency power management applications. It excels at minimizing on-state resistance (RDS(ON)) while maintaining superior switching performance. Key applications include power management functions, backlighting, and DC-DC converters. This device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.
Product Attributes
- Brand: DIODES
- Product Type: Dual P-Channel Enhancement Mode Field Effect Transistor
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Automotive Qualification: AEC-Q101 Qualified, PPAP Capable, Manufactured in IATF 16949 Certified Facilities
- Package Material: Molded Plastic, Green Molding Compound
- UL Flammability Classification: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin Annealed over Copper Leadframe
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary: Drain-Source Voltage | BVDSS | -30 | V | TA = +25C |
| Product Summary: RDS(ON) max @ VGS = -10V | RDS(ON) max | 45 | m | TA = +25C |
| Product Summary: ID @ TA = +25C | ID | -6.9 | A | TA = +25C |
| Product Summary: RDS(ON) max @ VGS = -4.5V | RDS(ON) max | 65 | m | TA = +25C |
| Product Summary: ID @ TA = +25C | ID | -5.1 | A | TA = +25C |
| Package | - | SO-8 | - | - |
| Weight | - | 0.072 | g (Approximate) | - |
| Drain-Source Voltage | VDSS | -30 | V | - |
| Gate-Source Voltage | VGSS | 20 | V | - |
| Drain Current (Steady State) TA = +25C | ID | -6.9 | A | TA = +25C |
| Drain Current (Steady State) TA = +70C | ID | -5.8 | A | TA = +70C |
| Pulsed Drain Current | IDM | -24 | A | Note 6 |
| Total Power Dissipation | PD | 2.5 | W | Note 5 |
| Thermal Resistance, Junction to Ambient | RJA | 50 | C/W | Note 5 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | - |
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS = 0V, ID = -250A |
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS = -30V, VGS = 0V |
| Gate-Source Leakage | IGSS | 100 | nA | VGS = 20V, VDS = 0V |
| Gate-Source Leakage | IGSS | 800 | nA | VGS = 25V, VDS = 0V |
| Gate Threshold Voltage | VGS(TH) | -1 to -2.1 | V | VDS = VGS, ID = -250A |
| Static Drain-Source On-Resistance | RDS(ON) | 45 | m | VGS = -10V, ID = -6.0A |
| Static Drain-Source On-Resistance | RDS(ON) | 65 | m | VGS = -4.5V, ID = -5.0A |
| Forward Transconductance | gfs | 8 | S | VDS = -10V, ID = -5.3A |
| Diode Forward Voltage | VSD | -0.5 to -1.2 | V | VGS = 0V, IS = -1.7A |
| Input Capacitance | Ciss | 722 | pF | VDS = -25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 114 | pF | VDS = -25V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 92 | pF | VDS = -25V, VGS = 0V, f = 1.0MHz |
| Gate Resistance | RG | 3.3 | VDS = 0V, VGS = 0V, f = 1.0MHz | |
| Total Gate Charge | QG | 6.8 | nC | VDS = -15V, VGS = -4.5V, ID = -6A |
| Total Gate Charge | QG | 13.7 | nC | VDS = -15V, VGS = -10V, ID = -6A |
| Gate-Source Charge | QGS | 1.6 | nC | VDS = -15V, VGS = -10V, ID = -6A |
| Gate-Drain Charge | QGD | 4.2 | nC | VDS = -15V, VGS = -10V, ID = -6A |
| Turn-On Delay Time | tD(ON) | 6.4 | ns | VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0 |
| Rise Time | tR | 5.3 | ns | VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0 |
| Turn-Off Delay Time | tD(OFF) | 26.5 | ns | VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0 |
| Fall Time | tF | 14.7 | ns | VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0 |
| Ordering Information Part Number | - | DMP3056LSDQ-13 | - | - |
| Ordering Information Package | - | SO-8 | - | - |
| Ordering Information Packing | - | Tape & Reel | - | - |
| Ordering Information Qty. Carrier | - | 2,500 | - | - |
2411041759_DIODES-DMP3056LSDQ-13_C5248909.pdf
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