Glass Passivated Silicon Rectifier EIC 1N5408G High Current Capability Low Forward Voltage Drop
Key Attributes
Model Number:
1N5408G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
5uA@1kV
Operating Junction Temperature Range:
-65℃~+175℃
Voltage - DC Reverse (Vr) (Max):
1kV
Voltage - Forward(Vf@If):
1V@3A
Current - Rectified:
3A
Mfr. Part #:
1N5408G
Package:
DO-201AD
Product Description
Product Overview
The 1N5400G - 1N5408G series are glass passivated junction silicon rectifiers designed for high current capability and reliability. These rectifiers offer a low reverse current and low forward voltage drop, making them suitable for various power supply and general rectification applications. They are Pb/RoHS free and housed in a DO-201AD package.
Product Attributes
- Brand: eicsemi.com
- Material: Glass Passivated Silicon
- Certifications: UL94-V0 rate flame retardant, MIL-STD-202 Method 208
- Color: Color band denotes cathode end
- Origin: Not specified
Technical Specifications
| Model | PRV (Volts) | Io (Amperes) | VRRM (V) | VRMS (V) | VDC (V) | IF(AV) (A) | IFSM (A) | VF (V) @ IF=3.0A | IR (A) @ VR=rated | IR(H) (A) @ VR=rated, Ta=100C | CJ (pF) | RJA (C/W) | TJ (C) | TSTG (C) |
| 1N5400G | 50 | 3.0 | 50 | 35 | 50 | 3.0 | 150 | 1.0 | 5.0 | 50 | 50 | 15 | -65 to +175 | -65 to +175 |
| 1N5401G | 100 | 3.0 | 100 | 70 | 100 | 3.0 | 150 | 1.0 | 5.0 | 50 | 50 | 15 | -65 to +175 | -65 to +175 |
| 1N5402G | 200 | 3.0 | 200 | 140 | 200 | 3.0 | 150 | 1.0 | 5.0 | 50 | 50 | 15 | -65 to +175 | -65 to +175 |
| 1N5404G | 400 | 3.0 | 400 | 280 | 400 | 3.0 | 150 | 1.0 | 5.0 | 50 | 50 | 15 | -65 to +175 | -65 to +175 |
| 1N5406G | 600 | 3.0 | 600 | 420 | 600 | 3.0 | 150 | 1.0 | 5.0 | 50 | 50 | 15 | -65 to +175 | -65 to +175 |
| 1N5407G | 800 | 3.0 | 800 | 560 | 800 | 3.0 | 150 | 1.0 | 5.0 | 50 | 50 | 15 | -65 to +175 | -65 to +175 |
| 1N5408G | 1000 | 3.0 | 1000 | 700 | 1000 | 3.0 | 150 | 1.0 | 5.0 | 50 | 50 | 15 | -65 to +175 | -65 to +175 |
2410121913_EIC-1N5408G_C2978813.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
