Complementary MOSFET pair DIODES DMC25D1UVT-7 with fast switching speed and low input output leakage
Key Attributes
Model Number:
DMC25D1UVT-7
Product Custom Attributes
Drain To Source Voltage:
25V;12V
Current - Continuous Drain(Id):
500mA;3.9A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
4Ω@4.5V,400mA
Gate Threshold Voltage (Vgs(th)):
1.5V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
27.6pF@10V
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
900pC@10V
Mfr. Part #:
DMC25D1UVT-7
Package:
TSOT-26
Product Description
Product Overview
The DMC25D1UVT is an advanced generation MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance. This device is ideal for DC-DC converters and power management functions, offering features such as low input capacitance, fast switching speed, low input/output leakage, and ESD protected gates. It is qualified to AEC-Q101 standards for high reliability.
Product Attributes
- Brand: Diodes Incorporated
- Device Type: Complementary Pair Enhancement Mode MOSFET
- Certifications: AEC-Q101 Qualified
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Case Material: Molded Plastic, Green Molding Compound
- UL Flammability Classification: Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin Annealed over Copper Leadframe
Technical Specifications
| Device | V(BR)DSS | RDS(ON) @ VGS | ID @ TA = +25C |
|---|---|---|---|
| Q1 (N-Channel) | 25V | 4 @ VGS = 4.5V | 0.5A |
| Q2 (P-Channel) | -12V | 55m @ VGS = -4.5V | -3.9A |
| 70m @ VGS = -2.5V | -3.5A |
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Maximum Ratings Q1 | ||||
| Drain-Source Voltage | VDSS | 25 | V | @TA = +25C |
| Gate-Source Voltage | VGSS | -0.5 to +8 | V | @TA = +25C |
| Continuous Drain Current (Note 5) | ID | 0.5 | A | VGS = 4.5V, @TA = +25C |
| Maximum Continuous Body Diode Forward Current (Note 6) | IS | 1.2 | A | @TA = +25C |
| Pulsed Drain Current (Note 6) | IDM | 1.5 | A | @TA = +25C |
| Maximum Ratings Q2 | ||||
| Drain-Source Voltage | VDSS | -12 | V | @TA = +25C |
| Gate-Source Voltage | VGSS | 8 | V | @TA = +25C |
| Continuous Drain Current (Note 5) | ID | -3.9 | A | VGS = -4.5V, Steady State, @TA = +25C |
| Continuous Drain Current (Note 5) | ID | -17.4 | A | Note 9, @TA = +25C |
| Continuous Drain Current (Note 5) | ID | -2.82 | A | VGS = -2.5V, @TA = +25C |
| Maximum Continuous Body Diode Forward Current (Note 6) | IS | -40 | A | @TA = +25C |
| Pulsed Drain Current (Note 6) | IDM | -40 | A | @TA = +25C |
| Thermal Characteristics | ||||
| Power Dissipation (Note 5) | PD | 1.3 | W | @TA = +25C |
| Power Dissipation (Note 5) | PD | 5 | W | Note 9, @TA = +25C |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 100 | C/W | Steady State, @TA = +25C |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 149 | C/W | Steady State, Note 9, @TA = +25C |
| Thermal Resistance, Junction to Case (Note 5) | RJC | 36 | C/W | @TA = +25C |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics Q1 | ||||
| Drain-Source Breakdown Voltage | BVDSS | 25 | V | VGS = 0V, ID = 250A, @TA = +25C |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS = 20V, VGS = 0V, @TA = +25C |
| Gate-Source Leakage | IGSS | 100 | nA | VGS = 8V, VDS = 0V, @TA = +25C |
| Gate Threshold Voltage | VGS(TH) | 0.65 to 1.5 | V | VDS = VGS, ID = 250A, @TA = +25C |
| Static Drain-Source On-Resistance | RDS(ON) | 3.8 to 4 | VGS = 4.5V, ID = 0.4A, @TA = +25C | |
| Diode Forward Voltage | VSD | 0.76 to 1.2 | V | VGS = 0V, IS = 0.29A, @TA = +25C |
| Input Capacitance | Ciss | 27.6 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz, @TA = +25C |
| Output Capacitance | Coss | 8.5 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz, @TA = +25C |
| Reverse Transfer Capacitance | Crss | 3.3 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz, @TA = +25C |
| Gate Resistance | Rg | 25 | VDS = 0V, VGS = 0V, f = 1MHz, @TA = +25C | |
| Total Gate Charge | Qg | 0.4 | nC | VGS = 4.5V, VDS = 5V, ID = 0.2A, @TA = +25C |
| Total Gate Charge | Qg | 0.9 | nC | VGS = 10V, VDS = 5V, ID = 0.2A, @TA = +25C |
| Gate-Source Charge | Qgs | 0.1 | nC | VGS = 4.5V, VDS = 5V, ID = 0.2A, @TA = +25C |
| Gate-Drain Charge | Qgd | 0.04 | nC | VGS = 4.5V, VDS = 5V, ID = 0.2A, @TA = +25C |
| Turn-On Delay Time | tD(ON) | 2.5 | ns | VGS = 4.5V, VDS = 6V, RG = 50, ID = 0.5A, @TA = +25C |
| Turn-On Rise Time | tR | 1.4 | ns | VGS = 4.5V, VDS = 6V, RG = 50, ID = 0.5A, @TA = +25C |
| Turn-Off Delay Time | tD(OFF) | 5.7 | ns | VGS = 4.5V, VDS = 6V, RG = 50, ID = 0.5A, @TA = +25C |
| Turn-Off Fall Time | tF | 4.3 | ns | VGS = 4.5V, VDS = 6V, RG = 50, ID = 0.5A, @TA = +25C |
| Electrical Characteristics Q2 | ||||
| Drain-Source Breakdown Voltage | BVDSS | -12 | V | VGS = 0V, ID = -250A, @TA = +25C |
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS = -6.4V, VGS = 0V, @TA = +25C |
| Gate-Source Leakage | IGSS | 10 | A | VGS = 8V, VDS = 0V, @TA = +25C |
| Gate Threshold Voltage | VGS(TH) | -0.35 to -1.5 | V | VDS = VGS, ID = -250A, @TA = +25C |
| Static Drain-Source On-Resistance | RDS(ON) | 55 | m | VGS = -4.5V, ID = -2.8A, @TA = +25C |
| Static Drain-Source On-Resistance | RDS(ON) | 70 | m | VGS = -2.5V, ID = -2.5A, @TA = +25C |
| Static Drain-Source On-Resistance | RDS(ON) | 100 | m | VGS = -1.8V, ID = -2.0A, @TA = +25C |
| Diode Forward Voltage | VSD | -1.2 | V | VGS = 0V, IS = -0.6A, @TA = +25C |
| Input Capacitance | Ciss | 9.7 | pF | VDS = -6V, VGS = 0V, f = 1MHz, @TA = +25C |
| Output Capacitance | Coss | 393 | pF | VDS = -6V, VGS = 0V, f = 1MHz, @TA = +25C |
| Reverse Transfer Capacitance | Crss | 1.9 | pF | VDS = -6V, VGS = 0V, f = 1MHz, @TA = +25C |
| Gate Resistance | Rg | 1846 | VDS = 0V, VGS = 0V, f = 1MHz, @TA = +25C | |
| Total Gate Charge | Qg | 24.5 | nC | VGS = -4.5V, VDS = -6V, ID = -2.8A, @TA = +25C |
| Gate-Source Charge | Qgs | 3.3 | nC | VGS = -4.5V, VDS = -6V, ID = -2.8A, @TA = +25C |
| Gate-Drain Charge | Qgd | 7.3 | nC | VGS = -4.5V, VDS = -6V, ID = -2.8A, @TA = +25C |
| Turn-On Delay Time | tD(ON) | 1.2 | s | VGS = -4.5V, VDS = -6V, RG = 6, ID = -2.8A, @TA = +25C |
| Turn-On Rise Time | tR | 2.7 | s | VGS = -4.5V, VDS = -6V, RG = 6, ID = -2.8A, @TA = +25C |
| Turn-Off Delay Time | tD(OFF) | 9.8 | s | VGS = -4.5V, VDS = -6V, RG = 6, ID = -2.8A, @TA = +25C |
| Turn-Off Fall Time | tF | 6.5 | s | VGS = -4.5V, VDS = -6V, RG = 6, ID = -2.8A, @TA = +25C |
| Mechanical Data | ||||
| Case | TSOT26 | |||
| Weight | 0.013 | grams (Approximate) | ||
| Dimensions (TSOT26) | ||||
| Dimension | Min | Max | Typ | Unit |
| A | - | 1.00 | - | mm |
| A1 | 0.01 | 0.10 | - | mm |
| A2 | 0.84 | 0.90 | - | mm |
| D | - | - | 2.90 | mm |
| E | - | - | 2.80 | mm |
| E1 | - | - | 1.60 | mm |
| b | 0.30 | 0.45 | - | mm |
| c | 0.12 | 0.20 | - | mm |
| e | - | - | 0.95 | mm |
| e1 | - | - | 1.90 | mm |
| L | 0.30 | 0.50 | - | mm |
| L2 | - | - | 0.25 | mm |
| 0 | 8 | 4 | ||
| 1 | 4 | 12 | - | |
| Ordering Information | Case | Packaging |
|---|---|---|
| DMC25D1UVT-7 | TSOT26 | 3000 / Tape & Reel |
| DMC25D1UVT-13 | TSOT26 | 10000 / Tape & Reel |
2412251105_DIODES-DMC25D1UVT-7_C5205194.pdf
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