Low voltage drop DIOTEC ES1J SMD rectifier diode optimized for high frequency switching applications
Key Attributes
Model Number:
ES1J
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-50℃~+150℃
Voltage - DC Reverse (Vr) (Max):
600V
Voltage - Forward(Vf@If):
1.7V@1A
Current - Rectified:
1A
Mfr. Part #:
ES1J
Package:
SMA(DO-214AC)
Product Description
Product Overview
The ES1A through ES1J series are superfast, efficient SMD rectifier diodes designed for high-frequency rectification and high-efficiency switching stages in commercial and industrial applications. These diodes feature extremely low reverse recovery times and low forward voltage drops, contributing to improved system performance. They are compliant with RoHS (excl. 7a), REACH, and Conflict Minerals regulations. Optional suffixes -Q and -AQ indicate AEC-Q101 compliance and qualification, respectively, making them suitable for automotive-related applications up to ASIL B.
Product Attributes
- Brand: Diotec Semiconductor AG
- Series: ES1A ... ES1J
- Package Type: SMA (DO-214AC)
- Certifications: RoHS (excl. 7a), REACH, Conflict Minerals
- Optional Compliance: AEC-Q101 compliant (-Q), AEC-Q101 qualified (-AQ)
- Mounting: Taped and reeled (7500 / 13)
- Case Material: UL 94V-0
Technical Specifications
| Specification | Details |
|---|---|
| Average Forward Current (IFAV) | 1 A (TT = 100C) |
| Forward Voltage (VF) | < 0.92 V (ES1A, ES1B/-Q/-AQ...ES1D/-Q at IF = 1 A) |
| < 1.3 V (ES1F...ES1G/-Q at IF = 1 A) | |
| < 1.7 V (ES1J/-AQ at IF = 1 A) | |
| Reverse Recovery Time (trr) | < 15 ns (ES1A, ES1B/-Q/-AQ...ES1D/-Q) |
| < 25 ns (ES1F...ES1G/-Q) | |
| < 35 ns (ES1J/-AQ) | |
| Repetitive Peak Reverse Voltage (VRRM) | 50 V (ES1A) |
| 100 V (ES1B/-Q/-AQ) | |
| 150 V (ES1C) | |
| 200 V (ES1D/-Q/-AQ) | |
| 300 V (ES1F) | |
| 400 V (ES1G/-Q) | |
| 600 V (ES1J/-AQ) | |
| Surge Peak Reverse Voltage (VRSM) | 50 V (ES1A) |
| 100 V (ES1B/-Q/-AQ) | |
| 150 V (ES1C) | |
| 200 V (ES1D/-Q/-AQ) | |
| 300 V (ES1F) | |
| 400 V (ES1G/-Q) | |
| 600 V (ES1J/-AQ) | |
| Peak Forward Surge Current (IFSM) | 30 A (Half sine-wave 50 Hz, 10 ms) |
| 33 A (Half sine-wave 60 Hz, 8.3 ms) | |
| Rating for Fusing (i2t) | 4.5 As (t < 10 ms) |
| Junction Temperature (Tjmax) | 150C |
| Storage Temperature (Ts) | -50...+150C |
| Weight | Approx. 0.07 g |
| Typical Thermal Resistance (Junction to Ambient) | 70 K/W (Mounted on PCB with 25 mm copper pads per terminal) |
| Typical Thermal Resistance (Junction to Terminal) | 30 K/W |
| Solder & Assembly Conditions | 260C / 10s |
| MSL Rating | 1 |
| HS Code | 85411000 |
2410122030_DIOTEC-ES1J_C16076287.pdf
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