Small signal switching diode diotec 1n4151 designed for high speed switching and low leakage current
Key Attributes
Model Number:
1N4151
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
4A
Reverse Leakage Current (Ir):
50nA@50V
Reverse Recovery Time (trr):
4ns
Diode Configuration:
Independent
Operating Junction Temperature Range:
-50℃~+175℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
50V
Pd - Power Dissipation:
500mW
Voltage - Forward(Vf@If):
1V@50mA
Current - Rectified:
200mA
Mfr. Part #:
1N4151
Package:
DO-35
Product Description
Product Overview
The 1N4148, 1N4150, 1N4151, and 1N4448 series are small signal switching diodes designed for high-speed switching applications and signal processing. These diodes offer very high switching speeds, low junction capacitance, and low leakage current. They are compliant with RoHS (without exemption), REACH, and Conflict Minerals regulations. Available in a standard DO-35 package, these diodes are suitable for commercial and industrial grades. Suffixes -Q and -AQ indicate AEC-Q101 compliance and qualification, respectively.
Product Attributes
- Brand: Diotec Semiconductor AG
- Package Type: DO-35 (~SOD-27)
- Certifications: RoHS compliant (w/o exemp.), REACH, Conflict Minerals
- Special Grades: AEC-Q101 compliant (-Q suffix), AEC-Q101 qualified (-AQ suffix)
- Mounting: Taped in ammo pack (5000 units)
- Origin: Germany (implied by company headquarters)
Technical Specifications
| Specification | 1N4148 | 1N4150 | 1N4151 | 1N4448 | Unit |
|---|---|---|---|---|---|
| Small Signal Switching Diodes | ✔ | ✔ | ✔ | ✔ | |
| IFAV (Max. average forward current) | 200 | 300 | 200 | mA (3) | |
| IFRM (Repetitive peak forward current) | 500 | 600 | 500 | mA (3) | |
| IFSM (Non-repetitive peak forward current, tp = 1 s, Tj = 25C) | 4000 | 4000 | 2000 | mA | |
| trr (Reverse recovery time) | < 4 | < 2 | < 4 | < 2 | ns (1) |
| VRRM (Repetitive peak reverse voltage) | 100 | 50 | 75 | 100 | V |
| VR (Reverse voltage) | 75 | 50 | 50 | 75 | V |
| Ptot (Max. power dissipation) | 500 | 500 | mW (3) | ||
| Tjmax (Junction temperature max) | 175 | 175 | 175 | 175 | C |
| TS (Storage temperature) | 175 | 175 | 175 | 175 | C |
| VF (Forward voltage, IF = 10 mA, Tj = 25C) | < 1.0 | < 1.2 | < 1.0 | < 1.0 | V |
| IR (Leakage current, VR = 20 V, Tj = 25C) | < 25 nA | < 5 A | < 100 nA | < 25 nA | |
| CT (Junction capacitance, VR = 0 V, f = 1 MHz) | typ. 4 | pF | |||
| Weight | approx. 0.1 | g | |||
| Solder & assembly conditions | 260C/10s | ||||
| HS Code | 85411000 | ||||
(1) IF = 10 mA through/ber IR = 10 mA to/auf IR = 1 mA
(2) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
(3) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
2410122108_DIOTEC-1N4151_C3312721.pdf
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