Low Leakage Current Small Signal Switching Diode DIOTEC LL4148R13 SMD Package for Signal Processing

Key Attributes
Model Number: LL4148R13
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
5uA@75V
Reverse Recovery Time (trr):
4ns
Diode Configuration:
Independent
Operating Junction Temperature Range:
-50℃~+175℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
500mW
Voltage - Forward(Vf@If):
1V@10mA
Current - Rectified:
150mA
Mfr. Part #:
LL4148R13
Package:
SOD-80C
Product Description

Product Overview

The LL4148, LL4150, LL4151, and LL4448 series are SMD small signal switching diodes designed for high-speed switching and signal processing applications. These diodes offer very high switching speed, low junction capacitance, and low leakage current. They are compliant with RoHS (without exemption), REACH, and Conflict Minerals regulations. An optional suffix '-Q' denotes AEC-Q101 compliance for automotive and industrial applications.

Product Attributes

  • Brand: Diotec Semiconductor AG
  • Case Outline: SOD-80C Glass MiniMELF
  • Certifications: RoHS compliant (w/o exemp.), REACH, Conflict Minerals
  • Optional Compliance: AEC-Q101 (-Q suffix)
  • HS Code: 85411000
  • Packaging: Taped and reeled (2500 / 7)
  • Weight: approx. 0.04 g

Technical Specifications

Specification LL4148/-Q LL4150 LL4151 LL4448
IFAV (Max. average forward current) 150 mA (3) 200 mA (3) 300 mA (3) 300 mA (3)
IFRM (Repetitive peak forward current) 500 mA (3) 500 mA (3) 600 mA (3) 600 mA (3)
IFSM (Non-repetitive peak forward current, tp = 1 s) 2000 mA 2000 mA 4000 mA 4000 mA
VR (Reverse voltage) 75 V 50 V 50 V 50 V
VRRM (Repetitive peak reverse voltage) 100 V 75 V 50 V 50 V
Ptot (Max. power dissipation) 500 mW (3)
Tj (Junction temperature) -50...+175C
Ts (Storage temperature) -50...+175C
VF (Forward voltage, Tj = 25C, IF = 10 mA) < 1.0 V < 1.0 V < 1.2 V < 1.0 V
IR (Leakage current, Tj = 25C, VR = 20 V) < 25 nA < 25 nA < 50 nA < 25 nA
IR (Leakage current, Tj = 25C, VR = 50 V) - < 5 A - < 5 A
IR (Leakage current, Tj = 25C, VR = 75 V) < 100 nA - < 5 A -
IR (Leakage current, Tj = 150C, VR = 20 V) < 50 A < 50 A < 50 A < 50 A
IR (Leakage current, Tj = 150C, VR = 50 V) - < 100 A < 50 A < 100 A
CT (Junction capacitance, VR = 0 V, f = 1 MHz) typ. 4 pF typ. 4 pF typ. 4 pF typ. 4 pF
trr (Reverse recovery time) < 4 ns
RthA (Typical thermal resistance junction to ambient) 300 K/W (2)
Alternative Case Outlines DO-35, Q-MiniMELF, Q-MicroMELF, SOD-123F, SOD-323F

(3) Mounted on P.C. board with 25 mm copper pads at each terminals.
(2) Mounted on P.C. board with 25 mm copper pads at each terminals.


2410122108_DIOTEC-LL4148R13_C3313151.pdf

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