DOWO A7 rectifier featuring repetitive peak reverse voltages of 400V 600V and 1000V in SOD 123FL case
Key Attributes
Model Number:
A7
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Leakage Current (Ir):
5uA@1kV
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
1kV
Voltage - Forward(Vf@If):
1.1V@1A
Current - Rectified:
1A
Mfr. Part #:
A7
Package:
SOD-123FL
Product Description
Product Overview
This is a surface mount rectifier, ideal for automated placement. It features a glass passivated junction chip, low forward voltage drop, and high surge current capability. The device is compliant to RoHS Directive 2011/65/EU and WEEE 2002/96/EC, and is halogen-free according to IEC 61249-2-21. It is suitable for applications requiring repetitive peak reverse voltages of 400V, 600V, or 1000V.
Product Attributes
- Case: SOD-123FL
- Molding compound meets UL 94 V-0 flammability rating
- Moisture sensitivity level: level 1, per J-STD-020
- Terminal: Matte tin plated leads, solderable per J-STD-002
- Meet JESD 201 class 1A whisker test
- Polarity: As marked
- Weight: 16 mg (approximately)
- Compliant to RoHS Directive 2011/65/EU
- In accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
Technical Specifications
| Parameter | Symbol | Conditions | TYP | MAX | UNIT |
| Repetitive peak reverse voltage | VRRM | 400, 600, 1000 | V | ||
| Reverse voltage, total rms value | VRMS | 280, 420, 700 | V | ||
| Maximum DC blocking voltage | VDC | 400, 600, 1000 | V | ||
| Forward current | IF(AV) | 1 | A | ||
| Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode | IFSM | 30 | A | ||
| Junction temperature | TJ | -55 to +150 | C | ||
| Storage temperature | TSTG | -55 to +150 | C | ||
| Junction to Lead Thermal Resistance | RJL | 25 | C/W | ||
| Junction to Ambient Thermal Resistance | RJA | 85 | C/W | ||
| Forward voltage | VF | IF = 1A, TJ = 25C | 1.1 | V | |
| Reverse current @ rated VR per diode | IR | TJ = 25C | 1 | A | |
| Reverse current @ rated VR per diode | IR | TJ = 125C | 50 | A | |
| Junction capacitance | CJ | 1 MHz, VR=4V | 7 | pF |
2410122003_DOWO-A7_C2943882.pdf
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