Surface Mount Super Fast Rectifier DOWO ES2DB with SMB DO214AA Package RoHS Compliant Halogen Free
Key Attributes
Model Number:
ES2DB
Product Custom Attributes
Reverse Leakage Current (Ir):
10uA
Non-Repetitive Peak Forward Surge Current:
50A
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
950mV@2A
Current - Rectified:
2A
Mfr. Part #:
ES2DB
Package:
SMB
Product Description
Product Overview
This series of surface mount super fast rectifiers, featuring glass passivated junction chips, are ideal for automated placement. They offer super fast recovery times for high efficiency and comply with RoHS standards and are halogen-free. Available in the SMB/DO-214AA package, these rectifiers are suitable for various applications requiring fast switching and high reliability.
Product Attributes
- Package: SMB/DO-214AA
- Polarity: Indicated by cathode band
- Epoxy: UL 94V-0 rate flame retardant
- Mounting Position: Any
- Certifications: RoHS standard, halogen-free
Technical Specifications
| Parameter | Symbol | ES2AB | ES2BB | ES2CB | ES2DB | ES2FB | ES2GB | ES2HB | ES2JB | Unit |
| Repetitive peak reverse voltage | VRRM | 50 | 100 | 150 | 200 | 300 | 400 | 500 | 600 | V |
| Reverse voltage, total rms value | VR(RMS) | 30 | 70 | 105 | 140 | 210 | 280 | 350 | 420 | V |
| Maximum DC blocking voltage | VDC | 50 | 100 | 150 | 200 | 300 | 400 | 500 | 600 | V |
| Forward current (Average) | IF(AV) | 2 | A | |||||||
| Junction temperature | TJ | - 55 to +150 | C | |||||||
| Storage temperature | TSTG | - 55 to +150 | C | |||||||
| Junction to Lead Thermal Resistance | RJL | 20 | C/W | |||||||
| Junction to Ambient Thermal Resistance | RJA | 75 | C/W | |||||||
| Surge peak forward current, 8.3 ms single half sine-wave | IFSM | 50 | A | |||||||
| Forward voltage per diode (IF = 2A,TJ = 25C) | VF | 0.95 | - | - | - | - | - | 1.30 | 1.70 | V |
| Reverse current @ rated VR per diode (TJ = 25C) | IR | 10 | A | |||||||
| Reverse current @ rated VR per diode (TJ = 125C) | IR | 350 | A | |||||||
| Junction capacitance (1 MHz, VR=4.0V) | CJ | 25 | - | - | - | - | - | 20 | - | pF |
| Reverse recovery time (IF=0.5A ,IR=1.0A IRR=0.25A) | trr | 35 | ns | |||||||
2505271725_DOWO-ES2DB_C48996690.pdf
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