power switch solution ElecSuper AO4409A ES P channel MOSFET with fast switching and low gate charge
Key Attributes
Model Number:
AO4409A(ES)
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12.4A
RDS(on):
7.5mΩ@10V,12A
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
267pF@15V
Input Capacitance(Ciss):
2.76nF@15V
Pd - Power Dissipation:
3W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
AO4409A(ES)
Package:
SOP-8
Product Description
Product Overview
The AO4409A(ES) is a P-channel MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering features like fast switching, high-density cell design, and a reliable, rugged construction. This device is avalanche rated and has low leakage current.
Product Attributes
- Brand: ElecSuper
- Model: AO4409A(ES)
- Package: SOP8
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: China (implied by www.elecsuper.com)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | -12.4 | A | ||
| Continuous Drain Current | ID | TA=100°C | -7.8 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 3.0 | W | ||
| Maximum Power Dissipation | PD | TA=100°C | 1.2 | W | ||
| Pulsed Drain Current | IDM | -49.5 | A | |||
| Single Pulse Avalanche Current | IAS | Tj=25°C, VDD=-30V, VGS=-10V, L=0.3mH, RG=25ohm | -34 | A | ||
| Single Pulse Avalanche Energy | EAS | Tj=25°C, VDD=-30V, VGS=-10V, L=0.3mH, RG=25ohm | 155 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 41.6 | °C/W | |||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-30V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.4 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-12A | 7.5 | 11.5 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-10A | 9.5 | 14 | mΩ | |
| Forward Transconductance | gFS | VDS=-5V, ID=-12A | 100 | S | ||
| Input Capacitance | CISS | VGS=0V, VDS =-15V, f=1MHz | 2760 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-15V, f=1MHz | 323 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-15V, f=1MHz | 267 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID=-12A | 35 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V, ID=-12A | 10 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V, ID=-12A | 10.5 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, ID=-12A, RG=3Ω | 11 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V, ID=-12A, RG=3Ω | 13.3 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V, ID=-12A, RG=3Ω | 74 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-15V, ID=-12A, RG=3Ω | 35 | ns | ||
| Forward Voltage | VSD | VGS=0V, ISD=-1A | -0.45 | -1.5 | V | |
2504101957_ElecSuper-AO4409A-ES_C42412351.pdf
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