Power MOSFET DOWO SI2302 N Channel Enhancement Mode with Low RDS On and High Drain Source Voltage
Key Attributes
Model Number:
SI2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Output Capacitance(Coss):
120pF
Pd - Power Dissipation:
700mW
Input Capacitance(Ciss):
300pF
Gate Charge(Qg):
4nC@4.5V
Mfr. Part #:
SI2302
Package:
SOT-23
Product Description
Product Overview
The SI2302 is an N-Channel Enhancement Mode Power MOSFET designed for high performance and efficiency. It features fast switching, low gate charge, and low RDS(on), making it suitable for applications requiring high power and current handling capabilities. Its key applications include battery protection, load switching, and power management.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=8V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.5 | 0.75 | 1.2 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=3A | -- | 29 | 45 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=2.5V,ID=2.8A | -- | 35 | 60 | m |
| Forward Transconductance | gFS | VDS=5V,ID=3A | -- | 8 | -- | S |
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHz | -- | 300 | -- | pF |
| Output Capacitance | Coss | -- | 120 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 80 | -- | pF | |
| Turn-on Delay Time | td(on) | VDD=10V, ID=3A VGS=4.5V,RGEN=6 | -- | 10 | -- | nS |
| Turn-on Rise Time | tr | -- | 50 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 17 | -- | nS | |
| Turn-off Fall Time | tf | -- | 10 | -- | nS | |
| Total Gate Charge | Qg | VDS=10V,ID=3A, VGS=4.5V | -- | 4 | -- | nC |
| Gate-Source Charge | Qgs | -- | 0.7 | -- | nC | |
| Gate-Drain Charge | Qg | -- | 1.5 | -- | nC | |
| Diode Forward Voltage | VSD | VGS=0V,IS=3.3A | -- | 0.75 | 1.2 | V |
| Diode Forward Current | IS | -- | -- | 3.3 | A | |
| Drain-Source Voltage | VDS | -- | -- | 20 | V | |
| Gate-Source Voltage | VGS | -- | -- | 8 | V | |
| Drain Current-Continuous | ID | -- | -- | 3.3 | A | |
| Drain Current-Pulsed | IDM | Note1 | -- | -- | 16 | A |
| Maximum Power Dissipation | PD | -- | -- | 0.7 | W | |
| Junction Temperature | TJ | -- | -- | 150 | ||
| Storage Temperature Range | TSTG | -55 | -- | +150 | ||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | -- | 179 | -- | /W |
2410010102_DOWO-SI2302_C2988646.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
