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quality P Channel Transistor DoesShare DP3401 Featuring Low RDS ON and High Current for Power Switching Needs factory
quality P Channel Transistor DoesShare DP3401 Featuring Low RDS ON and High Current for Power Switching Needs factory

P Channel Transistor DoesShare DP3401 Featuring Low RDS ON and High Current for Power Switching Needs

Key Attributes
Model Number: DP3401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
RDS(on):
90mΩ@2.5V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 P-Channel
Output Capacitance(Coss):
115pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
954pF
Gate Charge(Qg):
-
Mfr. Part #:
DP3401
Package:
SOT-23
Product Description

Product Overview

The DP3401 is a P-Channel Enhancement Mode Field Effect Transistor designed for load/power switching and interfacing switching applications. It features a high-density cell design for extremely low RDS(ON), offering exceptional on-resistance and maximum DC current capability. With a VDS of -30V and ID of -4A, this transistor is suitable for various industrial and electronic switching requirements.

Product Attributes

  • Brand: DOESHARE
  • Device Type: P-Channel Enhancement Mode Field Effect Transistor
  • Marking: DP3401
  • Device Marking: P05 or A19T
  • Package: SOT-23

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS 12 V
Continuous Drain Current ID -4 A
Power Dissipation PD 350 mW
Thermal Resistance from Junction to Ambient (t<5s) RJA 357 /W
Junction Temperature TJ 150
Storage Temperature TSTG -55 +150
Electrical Characteristics Ta = 25
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250A -30 V
Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 A
Gate-source leakage current IGSS VGS =12V, VDS = 0V 100 nA
On characteristics
Drain-source on-resistance (note 1) RDS(on) VGS =-10V, ID =-4.2A 50 65 m
VGS =-4.5V, ID =-4A 60 75 m
VGS =-2.5V,ID=-1A 75 100 m
Forward tranconductance (note 1) gFS VDS =-5V, ID =-5A 7 S
Gate threshold voltage VGS(th) VDS =VGS, ID =-250A -0.7 -0.9 -1.3 V
Dynamic characteristics (note 2)
Input capacitance Ciss VDS =-15V,VGS =0V,f =1MHz 954 pF
Output capacitance Coss 115 pF
Reverse transfer capacitance Crss 77 pF
Switching characteristics (note 2)
Turn-on delay time td(on) VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 6.3 ns
Turn-on rise time tr 3.2 ns
Turn-off delay time td(off) 38.2 ns
Turn-off fall Time tf 12 ns
Drain-source diode characteristics
Diode forward voltage (note 1) VSD IS=-1A,VGS=0V -1 V
Package Outline Dimensions (SOT-23)
Symbol Dimensions In Millimeters Dimensions In Inches
A 0.900 - 1.150 0.035 - 0.045
A1 0.000 - 0.100 0.000 - 0.004
A2 0.900 - 1.050 0.035 - 0.041
b 0.300 - 0.500 0.012 - 0.020
c 0.080 - 0.150 0.003 - 0.006
D 2.800 - 3.000 0.110 - 0.118
E 1.200 - 1.400 0.047 - 0.055
E1 2.250 - 2.550 0.089 - 0.100
e 0.950 TYP 0.037 TYP
e1 1.800 - 2.000 0.071 - 0.079
L 0.550 REF 0.022 REF
L1 0.300 - 0.500 0.012 - 0.020
0 - 8 0 - 8

2410122027_Doeshare-DP3401_C2931752.pdf

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