Glass Passivated Chip Junction Diode DOWO S1M Featuring High Surge Current and Cathode Band Polarity

Key Attributes
Model Number: S1M
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
1kV
Current - Rectified:
1A
Mfr. Part #:
S1M
Package:
SMA
Product Description

Product Overview

This product is a glass-passivated chip junction diode ideal for automated placement. It features a low forward voltage drop and high surge current capability. The device is compliant with RoHS Directive 2011/65/EU and WEEE 2002/96/EC, and is Halogen-free according to IEC 61249-2-21 definition. The terminals are matte tin plated and solderable per JESD22-B102, meeting JESD 201 class 2 whisker test. Polarity is indicated by a cathode band.

Product Attributes

  • Brand: Dowosemi
  • Package: DO-214AC (SMA)
  • Certifications: RoHS Directive 2011/65/EU, WEEE 2002/96/EC, IEC 61249-2-21 (Halogen-free)
  • Origin: China (implied by .cn domain and contact number format)

Technical Specifications

Model VRRM (V) VRMS (V) VDC (V) IF(AV) (A) IFSM (A) VF (V) trr (s) CJ (pF) TJ (C) TSTG (C) RJL (C/W) RJA (C/W) ERSM (mJ) IR (A)
S1A 50 35 50 1.1 30 0.45 4 15 -55 to +175 -55 to +175 27 75 1.5 5
S1B 100 70 100 1.1 30 0.45 4 15 -55 to +175 -55 to +175 27 75 1.5 5
S1D 200 140 200 1.1 30 0.45 4 15 -55 to +175 -55 to +175 27 75 1.5 5
S1G 400 280 400 1.1 30 0.45 4 15 -55 to +175 -55 to +175 27 75 1.5 5
S1J 600 420 600 1.1 30 0.45 4 15 -55 to +175 -55 to +175 27 75 1.5 5
S1K 800 560 800 1.1 30 0.45 4 15 -55 to +175 -55 to +175 27 75 1.5 5
S1M 1000 700 1000 1.1 30 0.45 4 15 -55 to +175 -55 to +175 27 75 1.5 5

2410121909_DOWO-S1M_C20624755.pdf

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