PNP Transistor ElecSuper MMBTA56 with 225 Milliwatt Power Dissipation and Complementary to MMBTA06 Series
Key Attributes
Model Number:
MMBTA56
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
50MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-
Mfr. Part #:
MMBTA56
Package:
SOT-23
Product Description
Product Overview
The MMBTA56 is a PNP transistor from ElecSuper, designed as a complementary component to the MMBTA06. It features a VCBO of -80V and an IC of -500mA, housed in a SOT-23 small outline plastic package. This transistor offers high stability and reliability, with a power dissipation of 225mW, making it suitable for various electronic applications. It is constructed with epoxy that meets UL 94V-0 flammability standards and can be mounted in any position.
Product Attributes
- Brand: ElecSuper
- Model Series: SuperTransistor
- Package Type: SOT-23 Plastic-Encapsulate
- Material: Plastic
- Flammability Rating: UL 94V-0
- Complementary to: MMBTA06
Technical Specifications
| Parameter | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -80 | V | |
| Collector-Emitter Voltage | VCEO | -80 | V | |
| Emitter-Base Voltage | VEBO | -4 | V | |
| Collector Current-Continuous | IC | -500 | mA | |
| Collector Power Dissipation | PC | 225 | mW | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | TSTG | -55~150 | ||
| Thermal Resistance Junction to Ambient | RJA | 555 | /W | |
| Collector-base breakdown voltage | V(BR)CBO | IC=-100uA, IE=0 | -80 | V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA, IB=0 | -80 | V |
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100uA, IC=0 | -4 | V |
| Collector cut-off current | ICBO | VCB=-80V, IE=0 | -100 | nA |
| Collector cut-off current | ICEO | VCB=-60V, IB=0 | -1 | uA |
| Emitter cut-off current | IEBO | VEB=-4V, IC=0 | -100 | nA |
| DC current gain | hFE1* | VCE=-1V, IC=-10mA | 100-400 | |
| DC current gain | hFE2* | VCE=-1V, IC=-100mA | 100 | |
| Collector-emitter saturation voltage | VCE(sat)* | IC=-100mA, IB=-10mA | -0.25 | V |
| Base-emitter voltage | VBE | IC=-100mA, VCE=-1V | -1.20 | V |
| Transition frequency | fT | VCE=-1V, IC=-100mA, f=100MHz | 50 | MHz |
*Pulse test: pulse width300us, duty cycle2.0%
Dimensions (SOT-23)
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. |
|---|---|---|
| A | 0.900 | 1.150 |
| A1 | 0.900 | 1.050 |
| b | 0.300 | 0.500 |
| c | 0.080 | 0.150 |
| D | 2.800 | 3.000 |
| E | 1.200 | 1.400 |
| E1 | 2.250 | 2.550 |
| e | 0.950 (TYP) | |
| e1 | 1.800 | 2.000 |
| L | 0.550 (REF) | |
| L1 | 0.300 | 0.500 |
| 0 | 8 |
Notes:
1. Controlling dimension: in millimeters.
2. General tolerance: 0.05mm.
3. The pad layout is for reference only.
4. Unit: mm.
2410121717_ElecSuper-MMBTA56_C5334062.pdf
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