P Channel MOSFET ElecSuper DMG3415U 7 ES Featuring Trench Technology for Power Switching Applications
Key Attributes
Model Number:
DMG3415U-7(ES)
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
4.9A
Operating Temperature -:
-
RDS(on):
30mΩ@4.5V;36mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
750pF@10V
Pd - Power Dissipation:
1.39W
Gate Charge(Qg):
9.5nC@4.5V
Mfr. Part #:
DMG3415U-7(ES)
Package:
SOT-23
Product Description
Product Overview
The DMG3415U-7(ES) is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering fast switching, high density cell design, and a reliable, rugged construction.
Product Attributes
- Brand: ElecSuper
- Model: DMG3415U-7(ES)
- Package: SOT-23
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -20 | V | |||
| Gate-Source Voltage | VGS | ±10 | V | |||
| Continuous Drain Current | ID | TA=25°C | -4.9 | A | ||
| Continuous Drain Current | ID | TA=75°C | -3.8 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 1.39 | W | ||
| Maximum Power Dissipation | PD | TA=75°C | 0.83 | W | ||
| Pulsed Drain Current | IDM | -15.6 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | (t ≤10s) | 65 | 90 | °C/W | |
| Junction-to-Lead Thermal Resistance | RθJL | 43 | 52 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-20V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=±10V, VDS=0V | ±10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.5 | -0.7 | -0.9 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-4A | 30 | 37 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-2.5V, ID=-4A | 36 | 47 | mΩ | |
| Forward Transconductance | gFS | VDS=-5V, ID=-4A | 40 | S | ||
| Charges, Capacitances and Gate Resistance | ||||||
| Input Capacitance | CISS | VGS=0V, VDS =-10V f=1MHz | 750 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-10V f=1MHz | 115 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-10V f=1MHz | 80 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-4.5V, VDS=-10V ID=-4A | 9.5 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-4.5V, VDS=-10V ID=-4A | 1 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-4.5V, VDS=-10V ID=-4A | 2.3 | nC | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=-10V RL=2.5Ω, RG=3Ω | 13 | ns | ||
| Rise Time | tr | VGS=-4.5V, VDS=-10V RL=2.5Ω, RG=3Ω | 10 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-4.5V, VDS=-10V RL=2.5Ω, RG=3Ω | 20 | ns | ||
| Fall Time | tf | VGS=-4.5V, VDS=-10V RL=2.5Ω, RG=3Ω | 30 | ns | ||
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, ISD=-1.0A | -1.5 | V | ||
2504101957_ElecSuper-DMG3415U-7-ES_C42379950.pdf
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