Compact SOT-23 PNP transistor ElecSuper BC807-40 suitable for electronic switching and amplification

Name: Compact SOT-23 PNP transistor ElecSuper BC807-40 suitable for electronic switching and amplification
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BC807-40
Availability: InStock

Key Attributes

Model Number: BC807-40

Product Custom Attributes

Current - Collector Cutoff:

100nA

Pd - Power Dissipation:

300mW

Transition Frequency(fT):

100MHz

Type:

PNP

Current - Collector(Ic):

500mA

Collector - Emitter Voltage VCEO:

45V

Operating Temperature:

Mfr. Part #:

BC807-40

Package:

SOT-23

Product Description

SuperTransistor BC807

Product Overview

The BC807 is a PNP transistor in a SOT-23 plastic-encapsulated package, designed for general-purpose applications. It offers complementary functionality to the BC817, with a power dissipation of 300mW, ensuring high stability and reliability. This transistor is suitable for various electronic circuits requiring PNP amplification and switching capabilities.

Product Attributes

Brand: ElecSuper
Package Type: SOT-23 Small Outline Plastic Package
Material: Plastic-Encapsulate
Flammability Rating: Epoxy UL: 94V-0
Mounting Position: Any

Technical Specifications

Parameters	Symbol	Ratings at 25 ambient temperature unless otherwise specified	Unit
Absolute Maximum Rating & Thermal Characteristics
Collector-Base Voltage	VCBO	-50	V
Collector-Emitter Voltage	VCEO	-45	V
Emitter-Base Voltage	VEBO	-5	V
Collector Current-Continuous	IC	-500	mA
Collector Power Dissipation	PC	300	mW
Junction Temperature	Tj	150
Storage Temperature	TSTG	-55~150
Thermal resistance from junction to ambient	RJA	417	/W
Electrical Characteristics (At TA = 25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC=-10uA, IE=0	-50 V
Collector-emitter breakdown voltage	V(BR)CEO*	IC=-10mA, IB=0	-45 V
Emitter-base breakdown voltage	V(BR)EBO	IE=-1uA, IC=0	-5 V
Collector cut-off current	ICBO	VCB=-45V, IE=0	-100 nA
Emitter cut-off current	IEBO	VEB=-4V, IC=0	-100 nA
DC current gain	hFE1*	VCE=-1V, IC=-100mA	100-600
DC current gain	hFE2*	VCE=-1V, IC=-500mA	40
Collector-emitter saturation voltage	VCE(sat)*	IC=-500mA, IB=-50mA	-0.70 V
Base-emitter saturation voltage	VBE(sat)*	IC=-500mA, IB=-50mA	-1.20 V
Transition frequency	fT	VCE=-5V, IC=-10mA, f=100MHz	100 MHz

Pin Configuration

Pin	Function	Outline
1	Base
2	Emitter
3	Collector

hFE1 Classification

Rank	Range	Marking
BC807-16	100-250	5A
BC807-25	160-400	5B
BC807-40	250-600	5C

Dimensions and Patterns (SOT-23)

Symbol	Dimensions (mm)		Symbol	Dimensions (mm)
Symbol	Min.	Max.	Symbol	Min.	Max.
A	0.900	1.150	E1	2.250	2.550
A1	0.900	1.050	e	0.950 (TYP)
b	0.300	0.500	e1	1.800	2.000
c	0.080	0.150	L	0.550 (REF)
D	2.800	3.00	L1	0.300	0.500
E	1.200	1.400		0	8
Note: 1. Controlling dimension: in millimeters. 2. General tolerance: 0.05mm. 3. The pad layout is for reference only. 4. Unit: mm.

2410121717_ElecSuper-BC807-40_C5249696.pdf

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Compact SOT-23 PNP transistor ElecSuper BC807-40 suitable for electronic switching and amplification