Low gate charge N Channel MOSFET ElecSuper ESJL3416A suitable for power switch and charging circuits
Key Attributes
Model Number:
ESJL3416A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7.5A
RDS(on):
13mΩ@4.5V,6.5A
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
88pF@10V
Pd - Power Dissipation:
1.39W
Input Capacitance(Ciss):
1.3nF@10V
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
ESJL3416A
Package:
SOT-23
Product Description
Product Overview
The ESJL3416A is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is a standard, Pb-free product.
Product Attributes
- Brand: SuperMOS (ElecSuper)
- Origin: ElecSuper Incorporated
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 20 | V | |||
| Gate-Source Voltage | VGS | ±10 | V | |||
| Continuous Drain Current | ID | TA=25°C | 7.5 | A | ||
| Continuous Drain Current | ID | TA=75°C | 5.8 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 1.39 | W | ||
| Maximum Power Dissipation | PD | TA=75°C | 0.83 | W | ||
| Pulsed Drain Current | IDM | 30 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 70 | 90 | °C/W | |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±10V | ±10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.5 | 0.7 | 0.9 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=6.5A | 13 | 17 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=2.5V, ID=5.5A | 16 | 23 | mΩ | |
| Forward transconductance | gfs | VDS=5V, ID=6.5A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 1300 | pF | ||
| Output Capacitance | COSS | 160 | pF | |||
| Reverse Transfer Capacitance | CRSS | 88 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=7.5A | 10 | nC | ||
| Gate-to-Source Charge | QGS | 4.5 | ||||
| Gate-to-Drain Charge | QGD | 2.5 | ||||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, RL=1.5Ω, RG=3Ω | 280 | ns | ||
| Rise Time | tr | 330 | ||||
| Turn-Off Delay Time | td(OFF) | |||||
| Fall Time | tf | 2.5 | ||||
| Forward Voltage | VSD | VGS=0V, IS=6.5A | 1.5 | V | ||
2504101957_ElecSuper-ESJL3416A_C42420856.pdf
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