P Channel MOSFET ElecSuper AO3415 Featuring Low Gate Charge and Construction for DC DC Conversion
Key Attributes
Model Number:
AO3415
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 P-Channel
Output Capacitance(Coss):
115pF
Input Capacitance(Ciss):
750pF
Pd - Power Dissipation:
1.39W
Gate Charge(Qg):
9.5nC@4.5V
Mfr. Part #:
AO3415
Package:
SOT-23
Product Description
Product Overview
The AO3415 is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications, offering fast switching, high-density cell design, and a reliable, rugged construction.
Product Attributes
- Brand: ElecSuper
- Model: AO3415
- Package: SOT-23
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: Pb-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-20V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=10V, VDS=0V | 10 | uA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.5 | -0.7 | -0.9 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-4A | 30 | 37 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=-2.5V, ID=-4A | 36 | 47 | m | |
| Forward Transconductance | gFS | VDS=-5V, ID=-4A | 40 | S | ||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, VDS =-10V f=1MHz | 750 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-10V f=1MHz | 115 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-10V f=1MHz | 80 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-4.5V, VDS=-10V ID=-4A | 9.5 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-4.5V, VDS=-10V ID=-4A | 1 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-4.5V, VDS=-10V ID=-4A | 2.3 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=-10V RL=2.5, RG=3 | 13 | ns | ||
| Rise Time | tr | VGS=-4.5V, VDS=-10V RL=2.5, RG=3 | 10 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-4.5V, VDS=-10V RL=2.5, RG=3 | 20 | ns | ||
| Fall Time | tf | VGS=-4.5V, VDS=-10V RL=2.5, RG=3 | 30 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, ISD=-1.0A | -1.5 | V | ||
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | TA=25C | -4.9 | A | ||
| Continuous Drain Current | ID | TA=75C | -3.8 | A | ||
| Maximum Power Dissipation | PD | TA=25C | 1.39 | W | ||
| Maximum Power Dissipation | PD | TA=75C | 0.83 | W | ||
| Pulsed Drain Current | IDM | -15.6 | A | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | Single Operation (t 10s) | 65 | 90 | C/W | |
| Junction-to-Lead Thermal Resistance | RJL | Single Operation (t 10s) | 43 | 52 | C/W | |
2504101957_ElecSuper-AO3415_C5350989.pdf
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