Power Switch Solution Featuring ElecSuper ESJL8810 N Channel Enhancement MOSFET with Low Gate Charge
Key Attributes
Model Number:
ESJL8810
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7.6A
RDS(on):
13.5mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
150pF@10V
Input Capacitance(Ciss):
1.15nF@10V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
15nC@4.5V
Mfr. Part #:
ESJL8810
Package:
SOT-23-6L
Product Description
Product Overview
The ESJL8810 is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Model: ESJL8810
- Package: SOT23-6L
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: Copyright ElecSuper Incorporated
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=10V | 10 | uA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.5 | 0.7 | 0.9 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=5A | 13.5 | 17 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=2.5V, ID=5A | 16.5 | 23 | m | |
| Forward Transconductance | gFS | VDS=5.0V, ID=5A | 40 | S | ||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 1150 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 165 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 150 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=5A | 15 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=5A | 1 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=5A | 3.5 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, RL=1.35, RG=3 | 8 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=10V, RL=1.35, RG=3 | 11 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, RL=1.35, RG=3 | 50 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=10V, RL=1.35, RG=3 | 18 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, IS=1A | 0.45 | 1.5 | V | |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | TA=25C | 7.6 | A | ||
| Continuous Drain Current | ID | TA=75C | 5.9 | A | ||
| Maximum Power Dissipation | PD | TA=25C | 1.5 | W | ||
| Maximum Power Dissipation | PD | TA=75C | 0.9 | W | ||
| Pulsed Drain Current | IDM | 30.4 | A | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | to | 150 | C | |
| Junction-to-Ambient Thermal Resistance | RJA | t 10 s | 83.3 | C/W | ||
2504101957_ElecSuper-ESJL8810_C42420781.pdf
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