ElecSuper TPN2R703NL L1Q ES N Channel MOSFET suitable for DC DC conversion and power switch circuits
Key Attributes
Model Number:
TPN2R703NL,L1Q(ES)
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4mΩ@10V;3.6mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
340pF
Input Capacitance(Ciss):
3.767nF
Output Capacitance(Coss):
442pF
Gate Charge(Qg):
67nC@10V
Mfr. Part #:
TPN2R703NL,L1Q(ES)
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The TPN2R703NL,L1Q(ES) is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and features a high-density cell design for low RDS(on), reliability, and avalanche rating.
Product Attributes
- Brand: ElecSuper
- Part Number: TPN2R703NL,L1Q(ES)
- Material: Halogen free
- Certifications: UL 94-0
- Packaging: PDFN3*3-8L
- Reel Size: 13 inches
- Quantity per reel: 5,000 PCS
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 80 | A | ||
| Continuous Drain Current | ID | TC=100°C | 48 | A | ||
| Maximum Power Dissipation | PD | 33.7 | W | |||
| Pulsed Drain Current | IDM | 320 | A | |||
| Avalanche Energy, Single Pulsed | EAS | Tj=25°C, VDD=15V, VG=10V, L=0.5mH, Rg=25Ω, IAS=26A | 169 | mJ | ||
| Operating Junction Temperature | TJ | -55 | 150 | °C | ||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Case Thermal Resistance | RθJC | Single Operation | 3.7 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | µA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.6 | 2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 2.4 | 3.1 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=10A | 3.6 | 4.7 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 3767 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | 442 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | 340 | pF | ||
| Total Gate Charge | QG | VGS=0 to 10V, VDD=15V, ID =15 A | 67 | nC | ||
| Gate-to-Source Charge | QGS | VGS=0 to 10V, VDD=15V, ID =15 A | 11 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=0 to 10V, VDD=15V, ID =15 A | 19 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=15V ID=30A, RG=3Ω | 10 | ns | ||
| Rise Time | tr | VGS=10V, VDD=15V ID=30A, RG=3Ω | 19 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDD=15V ID=30A, RG=3Ω | 50 | ns | ||
| Fall Time | tf | VGS=10V, VDD=15V ID=30A, RG=3Ω | 20 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=30A | 1.2 | V | ||
2506121200_ElecSuper-TPN2R703NL-L1Q-ES_C49108772.pdf
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