power switch ElecSuper ESN6484 N Channel MOSFET with low gate charge and excellent RDS ON performance
Key Attributes
Model Number:
ESN6484
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
91mΩ@10V;97mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
26pF
Number:
1 N-channel
Output Capacitance(Coss):
58pF
Input Capacitance(Ciss):
780pF
Pd - Power Dissipation:
25W
Gate Charge(Qg):
19.2nC@4.5V
Mfr. Part #:
ESN6484
Package:
PDFN5x6-8L
Product Description
Product Overview
The ESN6484 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS
- Part Number: ESN6484
- Material: Halogen free
- Certifications: UL 94V-0
- Testing: 100% UIS TESTED!
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 11 | A | ||
| Continuous Drain Current | ID | TC=75°C | 9 | A | ||
| Maximum Power Dissipation | PD | TC=25°C | 25 | W | ||
| Maximum Power Dissipation | PD | TC=75°C | 15 | W | ||
| Pulsed Drain Current | IDM | a | 44 | A | ||
| Avalanche Current, Single Pulsed | IAS | b | 12.5 | A | ||
| Avalanche Energy, Single Pulsed | EAS | b | 23.4 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤ 10 s, c | 21 | 25 | °C/W | |
| Junction-to-Case Thermal Resistance | RθJC | Steady State, c | 3.5 | 5 | °C/W | |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.8 | 3.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=7.5A | 91 | 122 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=5A | 97 | 142 | mΩ | |
| Forward Trans conductance | gFS | VDS=5.0V, ID=7.5A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=50V | 780 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=50V | 58 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=50V | 26 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=50V, ID=7.5A | 19.2 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=50V, ID=7.5A | 3.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=50V, ID=7.5A | 5.3 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=50V, RL=6Ω, RG=3Ω | 6 | ns | ||
| Rise Time | tr | VGS=10V, VDS=50V, RL=6Ω, RG=3Ω | 2.6 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=50V, RL=6Ω, RG=3Ω | 22 | ns | ||
| Fall Time | tf | VGS=10V, VDS=50V, RL=6Ω, RG=3Ω | 2.5 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=1A | 0.7 | 1.2 | V | |
2504101957_ElecSuper-ESN6484_C5224311.pdf
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