Power MOSFET N Channel Enhancement Mode Device DOWO AO3400 with Low On Resistance and SOT 23 Package
Key Attributes
Model Number:
AO3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-
RDS(on):
52mΩ@2.5V,4A
Gate Threshold Voltage (Vgs(th)):
1.4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Output Capacitance(Coss):
99pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
1.05nF
Mfr. Part #:
AO3400
Package:
SOT-23
Product Description
Product Overview
The AO3400 is an N-Channel Enhancement Mode Field Effect Transistor in a SOT-23 package. It features a high-density cell design for extremely low RDS(on) and exceptional on-resistance and maximum DC current capability, making it suitable for load/power switching and interfacing switching applications.
Product Attributes
- Package: SOT-23
- Flammability Rating: Epoxy UL 94V-0
- Mounting Position: Any
Technical Specifications
| Parameters | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 5.8 | A | |||
| Drain Current-Pulsed(note 1) | IDM | 30 | A | |||
| Power Dissipation | PD | 350 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -50 | +150 | |||
| Thermal Resistance From Junction to Ambient (note 2) | RJA | 357 | /W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain current | IDSS | VDS=24V, VGS=0V | 1 | uA | ||
| Gate-body Leakage | IGSS | VDS=12V, VDS=0V | 100 | nA | ||
| Drain-Source On-Resistance (note 3) | RDS(ON) | VGS=10V, ID=5.8A | 35 | m | ||
| VGS=4.5V, ID=5A | 40 | m | ||||
| VGS=2.5V, ID=4A | 52 | m | ||||
| Forward trans conductance | gfs | VDS=5V, ID=5A | 8 | S | ||
| Gate-Threshold voltage* | V GS (th) | VDS=VGS, ID=250uA | 0.7 | 1.4 | V | |
| Dynamic characteristics (note 4,5) | ||||||
| Input capacitance | Ciss | VDS=15V, VGS=0V,f=1MHz | 1050 | pF | ||
| Output capacitance | Coss | 99 | ||||
| Reverse Transfer capacitance | Crss | 77 | ||||
| Gate resistance | Rg | VDS=0V, VGS=0V,f=1MHz | 3.6 | |||
| Switching characteristics (note 4,5) | ||||||
| Turn-on Time | td(on) | VGS=10V, RL=2.7, VDS=15V, RGEN=3 | 5 | ns | ||
| Rise time | tr | 7 | ||||
| Turn-off Time | td(off) | 40 | ||||
| Fall time | tf | 6 | ||||
| Drain-source diode characteristics and maximum ratings | ||||||
| Diode forward voltage | VSD | IS=1A, VGS=0V | 1.0 | V | ||
2410121700_DOWO-AO3400_C5151534.pdf
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