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quality SOT23 Small Outline Package PNP Transistor ElecSuper BC856 B with 80V VCBO and 200mW Power Dissipation factory
quality SOT23 Small Outline Package PNP Transistor ElecSuper BC856 B with 80V VCBO and 200mW Power Dissipation factory

SOT23 Small Outline Package PNP Transistor ElecSuper BC856 B with 80V VCBO and 200mW Power Dissipation

Key Attributes
Model Number: BC856 B
Product Custom Attributes
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
100mA
Mfr. Part #:
BC856 B
Package:
SOT-23
Product Description

Product Overview

The ElecSuper BC856/BC857/BC858 series are PNP transistors in a SOT-23 plastic-encapsulate small outline package. These complementary transistors to BC856/BC857/BC858 offer a power dissipation of 200mW and are ideally suited for automatic insertion. They are designed for applications requiring VCBO ratings from -30V to -80V and a continuous collector current (IC) of -100mA.

Product Attributes

  • Brand: ElecSuper
  • Package Type: SOT-23 Small Outline Plastic Package
  • Encapsulation: Plastic
  • Material: Epoxy
  • Flammability Rating: UL 94V-0
  • Mounting Position: Any

Technical Specifications

Model Marking VCBO (V) VCEO (V) IC (mA) PC (mW) hFE (Min/Typ) VCE(sat) (V) VBE(sat) (V) COB (pF) fT (MHz)
BC856A 3A -80 -65 -100 200 125 / 250 -0.50 -1.10 4.5 100
BC856B 3B -80 -65 -100 200 220 / 475
BC857A 3E -50 -45 -100 200 125 / 250
BC857B 3F -50 -45 -100 200 220 / 475 -0.50 -1.10 4.5 100
BC857C 3G -50 -45 -100 200 420 / 800
BC858A 3J -30 -30 -100 200 125 / 250 -0.50 -1.10 4.5 100
BC858B 3K -30 -30 -100 200 220 / 475
BC858C 3L -30 -30 -100 200 420 / 800 -0.50 -1.10 4.5 100
Parameter Symbol Condition Value Unit
Collector-Base Voltage VCBO (BC856) -80 V
Collector-Base Voltage VCBO (BC857) -50 V
Collector-Base Voltage VCBO (BC858) -30 V
Collector-Emitter Voltage VCEO (BC856) -65 V
Collector-Emitter Voltage VCEO (BC857) -45 V
Collector-Emitter Voltage VCEO (BC858) -30 V
Emitter-Base Voltage VEBO -6 V
Collector Current-Continuous IC -100 mA
Collector Power Dissipation PC 200 mW
Junction Temperature Tj 150
Storage Temperature TSTG -55~150
Thermal resistance from junction to ambient RJA 625 /W
Collector-base breakdown voltage V(BR)CBO IC=-10uA, IE=0 (BC856) -80 V
Collector-base breakdown voltage V(BR)CBO IC=-10uA, IE=0 (BC857) -50 V
Collector-base breakdown voltage V(BR)CBO IC=-10uA, IE=0 (BC858) -30 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 (BC856) -65 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 (BC857) -45 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 (BC858) -30 V
Emitter-base breakdown voltage V(BR)EBO IE=-10uA, IC=0 -6 V
Collector cut-off current ICBO VCB=-70V, IE=0 (BC856) -100 nA
Collector cut-off current ICBO VCB=-45V, IE=0 (BC857) -100 nA
Collector cut-off current ICBO VCB=-25V, IE=0 (BC858) -100 nA
Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA
Collector output capacitance COB VCB=-10V, f=1MHz 4.5 pF
Transition frequency fT VCE=-5V, IC=-10mA, f=100MHz 100 MHz
Symbol Dimensions (mm) Min. Max.
A 0.900 1.150
A1 0.900 1.050
b 0.300 0.500
c 0.080 0.150
D 2.800 3.00
E 1.200 1.400
E1 2.250 2.550
e 0.950 TYP
e1 1.800 2.000
L 0.550 REF
L1 0.300 0.500
0 8

2512111340_ElecSuper-BC856-B_C5694241.pdf

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