Power Switch and DC DC Conversion Component ElecSuper ESNQ07R086 N Channel MOSFET with Low Gate Charge
Key Attributes
Model Number:
ESNQ07R086
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
80A
RDS(on):
6.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.9V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
230pF
Output Capacitance(Coss):
266pF
Pd - Power Dissipation:
147W
Input Capacitance(Ciss):
4.065nF
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
ESNQ07R086
Package:
TO-252
Product Description
Product Overview
The ESNQ07R086 is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) with low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications. This is a standard, Pb-free product.
Product Attributes
- Brand: ElecSuper
- Model: ESNQ07R086
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Limit/Typical | Unit | Conditions |
| Drain-Source Voltage | BVDSS | 68 | V | VGS=0V, ID=250uA |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 80 / 52 | A | TC=25°C / TC=75°C |
| Maximum Power Dissipation | PD | 147 | W | |
| Pulsed Drain Current | IDM | 320 | A | |
| Avalanche Current, Single Pulsed | IAS | 37 | A | Tj=25°C,VDD=68V, VG=10V, L=0.3mH,Rg=25Ω |
| Avalanche Energy, Single Pulsed | EAS | 205 | mJ | Tj=25°C,VDD=68V, VG=10V, L=0.3mH,Rg=25Ω |
| Operating Junction Temperature | TJ | 150 | °C | |
| Lead Temperature | TL | 260 | °C | |
| Storage Temperature Range | Tstg | -55 to 150 | °C | |
| Junction-to-Case Thermal Resistance | RθJC | 0.85 | ° C/W | |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=68V, VGS=0V |
| Gate-to-source Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Gate Threshold Voltage | VGS(TH) | 2.0 / 2.9 / 4.0 | V | VGS=VDS, ID=250uA |
| Drain-to-source On-resistance | RDS(on) | 6.6 / 8.6 | mΩ | VGS=10V, ID=30A |
| Forward transconductance | gfs | 150 | S | VDS=5V, ID=30A |
| Input Capacitance | CISS | 4065 | pF | VGS=0V, f=1MHz, VDS=25V |
| Output Capacitance | COSS | 266 | pF | VGS=0V, f=1MHz, VDS=25V |
| Reverse Transfer Capacitance | CRSS | 230 | pF | VGS=0V, f=1MHz, VDS=25V |
| Total Gate Charge | QG(TOT) | 35 | nC | VGS=10V, VDS=30V, ID=20A |
| Gate-to-Source Charge | QGS | 11 | nC | VGS=10V, VDS=30V, ID=20A |
| Gate-to-Drain Charge | QGD | 9 | nC | VGS=10V, VDS=30V, ID=20A |
| Turn-On Delay Time | td(ON) | 15 | ns | VGS=10V, VDS=30V, ID=20A, RG=3Ω |
| Rise Time | tr | 95 | ns | VGS=10V, VDS=30V, ID=20A, RG=3Ω |
| Turn-Off Delay Time | td(OFF) | 48 | ns | VGS=10V, VDS=30V, ID=20A, RG=3Ω |
| Fall Time | tf | 33 | ns | VGS=10V, VDS=30V, ID=20A, RG=3Ω |
| Forward Voltage | VSD | 1.5 | V | VGS=0V, IS=30A |
2504101957_ElecSuper-ESNQ07R086_C42412312.pdf
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