rugged construction ElecSuper ESLM3400 MOSFET for charging circuits and power switching applications
Key Attributes
Model Number:
ESLM3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
21mΩ@10V,5.8A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
48pF@10V
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
550pF@10V
Gate Charge(Qg):
6.7nC
Mfr. Part #:
ESLM3400
Package:
SOT-23
Product Description
Product Overview
The ESLM3400 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits, offering high density cell design and a reliable, rugged construction.
Product Attributes
- Brand: SuperMOS
- Origin: ElecSuper Incorporated
- Material: Halogen free
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C | 5.8 | A | ||
| Continuous Drain Current | ID | TA=70°C | 4.6 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 1.4 | W | ||
| Maximum Power Dissipation | PD | TA=70°C | 0.9 | W | ||
| Pulsed Drain Current | IDM | tp=10μs, Duty Cycle=1% | 30 | A | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤ 10 s | 75 | 90 | °°C/W | |
| Junction-to-Case Thermal Resistance | RθJC | Steady State | 43 | 70 | °°C/W | |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=24V, VGS=0V | 1 | μA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.6 | 1.0 | 1.3 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=5.8A | 21.0 | 28.0 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=5.0A | 25.0 | 33.0 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=2.5V, ID=3.0A | 33.0 | 51.0 | mΩ | |
| Forward Transconductance | gFS | VDS=5.0V, ID=5.8A | 7.8 | 15 | S | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 550 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 62 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 48 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=5.8A | 6.7 | nC | ||
| Threshold Gate Charge | QG(TH) | VGS=4.5V, VDS=10V, ID=5.8A | 0.75 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=5.8A | 1.65 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=5.8A | 1.78 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω | 3.8 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω | 13.0 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω | 14.2 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω | 2.0 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.75 | 1.5 | V | |
2504101957_ElecSuper-ESLM3400_C42420776.pdf
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