ElecSuper DMP6023LE 13 ES N Channel MOSFET offering performance and low RDS ON for DC DC conversion
Key Attributes
Model Number:
DMP6023LE-13(ES)
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
6.5A
RDS(on):
30mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF
Pd - Power Dissipation:
2.2W
Output Capacitance(Coss):
65pF
Mfr. Part #:
DMP6023LE-13(ES)
Package:
SOT-223
Product Description
Product Overview
The DMP6023LE-13(ES) is an N-Channel enhancement mode MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering high density cell design, reliability, avalanche rating, and low leakage current.
Product Attributes
- Brand: SuperMOS
- Model: DMP6023LE-13(ES)
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: ElecSuper Incorporated
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | 6.5 | A | ||
| Continuous Drain Current | ID | TA=100°C | 3.9 | A | ||
| Maximum Power Dissipation | PD | 2.2 | W | |||
| Pulsed Drain Current | IDM | 26 | A | |||
| Operating Junction Temperature | TJ | -55 | 150 | °C | ||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 57 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.2 | 1.6 | 2.3 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=3A | 23 | 30 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=2A | 26 | 34 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 1035 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 65 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 60 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=0 to 10V, VDS=30V, ID=5A | 25 | nC | ||
| Gate-to-Source Charge | QGS | VGS=0 to 10V, VDS=30V, ID=5A | 4.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=0 to 10V, VDS=30V, ID=5A | 6.5 | nC | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=30V, ID=20A, RG=3Ω | 7 | ns | ||
| Rise Time | tr | VGS=10V, VDD=30V, ID=20A, RG=3Ω | 20 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDD=30V, ID=20A, RG=3Ω | 16 | ns | ||
| Fall Time | tf | VGS=10V, VDD=30V, ID=20A, RG=3Ω | 23 | ns | ||
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, IS=5A | 1.2 | V | ||
2504101957_ElecSuper-DMP6023LE-13-ES_C42434111.pdf
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