N channel MOSFET ElecSuper 150N03NF-ES designed for power switching and charging circuit performance
Key Attributes
Model Number:
150N03NF-ES
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
123A
RDS(on):
1.7mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.75V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
103pF
Number:
1 N-channel
Output Capacitance(Coss):
882pF
Input Capacitance(Ciss):
3.1nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
43nC@10V
Mfr. Part #:
150N03NF-ES
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The 150N03NF-ES is an N-channel enhancement mode MOS Field Effect Transistor from ElecSuper. It utilizes advanced trench technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuits. This standard product is Pb-free and features a high-density cell design for low RDS(on), fast switching, and a reliable, rugged construction.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25C | 123 | A | ||
| TC=75C | 95 | A | ||||
| Maximum Power Dissipation | PD | TC=25C | 50 | W | ||
| TC=75C | 30 | W | ||||
| Pulsed Drain Current | IDM | 260 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | 38 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 216 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Case Thermal Resistance | RθJC | t ≤ 10 s | 2.5 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=30V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.1 | 1.75 | 2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 1.7 | 2.2 | mΩ | |
| VGS=4.5V, ID=20A | 2.6 | 3.6 | mΩ | |||
| Input Capacitance | CISS | VGS=0V, VDS =15V f=1MHz | 3100 | pF | ||
| Output Capacitance | COSS | 882 | pF | |||
| Reverse Transfer Capacitance | CRSS | 103 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=15V ID=20A | 43 | nC | ||
| Gate-to-Source Charge | QGS | 8.5 | nC | |||
| Gate-to-Drain Charge | QGD | 6 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=15V, RG=3Ω, RL=0.75Ω | 11.5 | ns | ||
| Rise Time | tr | 5.2 | ns | |||
| Turn-Off Delay Time | td(OFF) | 40 | ns | |||
| Fall Time | tf | 8 | ns | |||
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, ISD=20A | 1.5 | V | ||
2504101957_ElecSuper-150N03NF-ES_C41409348.pdf
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