Power Switch Component ElecSuper ESGNH10R17 N Channel MOSFET with Low Gate Charge and High Current
Key Attributes
Model Number:
ESGNH10R17
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
46A
RDS(on):
12mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Output Capacitance(Coss):
145pF
Input Capacitance(Ciss):
1.21nF
Pd - Power Dissipation:
71.4W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
ESGNH10R17
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The ESGNH10R17 is an N-Channel enhancement mode MOSFET utilizing advanced shielded gate trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuits. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS
- Part Number: ESGNH10R17
- Package: PDFN3*3-8L
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: ElecSuper Incorporated
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 46 | A | ||
| Continuous Drain Current | ID | TC=100°C | 29 | A | ||
| Maximum Power Dissipation | PD | 71.4 | W | |||
| Pulsed Drain Current | IDM | 184 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | 20 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 80 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Case Thermal Resistance | RθJC | Single Operation | 1.75 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.7 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 12 | 17 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=10A | 14.5 | 20 | mΩ | |
| Forward transconductance | gfs | VDS=10V, ID=20A | 100 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=50V | 1210 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=50V | 145 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=50V | 12 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=50V, ID=20A | 23 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=50V, ID=20A | 3 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=50V, ID=20A | 5 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=50V, ID=20A, RG=3Ω | 9.5 | ns | ||
| Rise Time | tr | VGS=10V, VDS=50V, ID=20A, RG=3Ω | 3.6 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=50V, ID=20A, RG=3Ω | 25.6 | ns | ||
| Fall Time | tf | VGS=10V, VDS=50V, ID=20A, RG=3Ω | 4.5 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=20A | 1.5 | V | ||
2504101957_ElecSuper-ESGNH10R17_C42412350.pdf
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