ElecSuper DMP4065S-7 ES P channel MOSFET with UL 94V 0 certification and halogen free construction
Key Attributes
Model Number:
DMP4065S-7(ES)
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
3A
RDS(on):
65mΩ@10V;88mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
31pF
Output Capacitance(Coss):
37pF
Input Capacitance(Ciss):
316pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
8nC@10V
Mfr. Part #:
DMP4065S-7(ES)
Package:
SOT-23
Product Description
DMP4065S-7(ES) P-channel MOSFET
The DMP4065S-7(ES) is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. Key advantages include fast switching, high density cell design for low RDS(on), and being reliable, rugged, and avalanche rated with low leakage current.
Product Attributes
- Brand: SuperMOS
- Model: DMP4065S-7(ES)
- Package: SOT-23
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: ElecSuper Incorporated
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Voltage | BVDSS | VGS=0V, ID=-250uA | -40 | V | ||
| VDS=-40V, VGS=0V | -1 | uA | ||||
| Gate-Source Voltage | VGS | 20 | V | |||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-1.2A | 65 | 85 | m | |
| VGS=-4.5V, ID=-1A | 88 | 111 | m | |||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.1 | -1.6 | -2.2 | V |
| Continuous Drain Current | ID | TA=25C | -3.0 | A | ||
| Continuous Drain Current | ID | TA=100C | -1.9 | A | ||
| Maximum Power Dissipation | PD | 1.3 | W | |||
| Pulsed Drain Current | IDM | -12.0 | A | |||
| Operating Junction Temperature | TJ | -55 | +150 | C | ||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | (t 10s) | 95 | C/W | ||
| Input Capacitance | CISS | VGS=0V, VDS =-20V f=1MHz | 316 | pF | ||
| Output Capacitance | COSS | 37 | pF | |||
| Reverse Transfer Capacitance | CRSS | 31 | pF | |||
| Total Gate Charge | QG | VGS=0 to -10V, VDS=-20V, ID =-1.2A | 8 | nC | ||
| Gate-to-Source Charge | QGS | 1.5 | ||||
| Gate-to-Drain Charge | QGD | 1.7 | ||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDD=-20V ID=-1.2A, RG=6 | 6 | ns | ||
| Rise Time | tr | 5 | ||||
| Turn-Off Delay Time | td(OFF) | 26 | ||||
| Fall Time | tf | 15 | ||||
| Forward Voltage | VSD | VGS=0V, IS=-1.5A | -1.2 | V | ||
2506121200_ElecSuper-DMP4065S-7-ES_C49108755.pdf
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