Power Switch and Charging Circuit Applications Using ElecSuper AO3401A P Channel MOSFET with Low RDS
Key Attributes
Model Number:
AO3401A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
44mΩ@10V
Gate Threshold Voltage (Vgs(th)):
800mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 P-Channel
Output Capacitance(Coss):
54pF
Input Capacitance(Ciss):
954pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
9.4nC@4.5V
Mfr. Part #:
AO3401A
Package:
SOT-23-3L
Product Description
Product Overview
The AO3401A is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and features a high-density cell design for low RDS(on), fast switching, and is avalanche rated.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | BVDSS | -30 | V | |
| Gate-Source Voltage | VGS | ±12 | V | |
| Continuous Drain Current | ID | TA=25°C | -3.9 | A |
| Continuous Drain Current | ID | TA=100°C | -2.4 | A |
| Maximum Power Dissipation | PD | TA=25°C | 1.5 | W |
| Pulsed Drain Current | IDM | a | -15.6 | A |
| Junction-to-Ambient Thermal Resistance | RθJA | b | 83 | °C/W |
| Operating Junction Temperature | TJ | -55 to +150 | °C | |
| Storage Temperature Range | Tstg | -55 to +150 | °C | |
| Electrical Characteristics | ||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | µA |
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA |
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.5 to -1.1 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-3.9A | 42 (Typ.) | mΩ |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-3.5A | 49 (Typ.) | mΩ |
| Drain-to-source On-resistance | RDS(on) | VGS=-2.5V, ID=-2.5A | 72 (Typ.) | mΩ |
| Input Capacitance | CISS | VGS=0V, VDS =-15V, f=1MHz | 510 (Typ.) | pF |
| Output Capacitance | COSS | VGS=0V, VDS =-15V, f=1MHz | 54 (Typ.) | pF |
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-15V, f=1MHz | 47 (Typ.) | pF |
| Total Gate Charge | QG(TOT) | VGS=0 to -4.5V, VDS=-15V, ID =-3A | 6 (Typ.) | nC |
| Gate-to-Source Charge | QGS | VGS=0 to -4.5V, VDS=-15V, ID =-3A | 1.4 (Typ.) | nC |
| Gate-to-Drain Charge | QGD | VGS=0 to -4.5V, VDS=-15V, ID =-3A | 2 (Typ.) | nC |
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=-15V, ID=-3A, RG=3Ω | 10 (Typ.) | ns |
| Rise Time | tr | VGS=-4.5V, VDS=-15V, ID=-3A, RG=3Ω | 80 (Typ.) | ns |
| Turn-Off Delay Time | td(OFF) | VGS=-4.5V, VDS=-15V, ID=-3A, RG=3Ω | 120 (Typ.) | ns |
| Fall Time | tf | VGS=-4.5V, VDS=-15V, ID=-3A, RG=3Ω | 350 (Typ.) | ns |
| Forward Voltage | VSD | VGS=0V, IS=-2A | -1.2 (Typ.) | V |
2507230935_ElecSuper-AO3401A_C5224202.pdf
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