power switch ElecSuper BSS8402DW 7 F ES P Channel MOSFET suitable for DC DC conversion applications
Key Attributes
Model Number:
BSS8402DW-7-F(ES)
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
160mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5Ω@10V;4.5Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.6pF
Output Capacitance(Coss):
4pF
Pd - Power Dissipation:
230mW
Input Capacitance(Ciss):
17pF
Gate Charge(Qg):
1.1nC@10V
Mfr. Part #:
BSS8402DW-7-F(ES)
Package:
SOT-363
Product Description
Product Overview
The BSS8402DW-7-F(ES) is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering features like fast switching, high-density cell design, and avalanche rating. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Part Number: BSS8402DW-7-F(ES)
- Package: SOT-363
- Marking: 84KZ
- Material: Halogen free
- Packing: Tape & Reel
- Quantity per reel: 3,000 PCS
- Flammability Rating: UL 94V-0
- Reel size: 7 inches
- Certifications: Pb-free
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | -0.16 | A | ||
| Continuous Drain Current | ID | TA=100°C | -0.10 | A | ||
| Maximum Power Dissipation | PD | 0.23 | W | |||
| Pulsed Drain Current | IDM | -0.65 | A | |||
| Operating Junction Temperature | TJ | -55 | +150 | °C | ||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 543 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-60V | -100 | nA | ||
| Gate-to-source Leakage Current | IGSS | VGS=±20V, VDS=0V | ±10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.1 | -1.6 | -2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-0.15A | 3.5 | 5.2 | Ω | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-0.1A | 4.5 | 6.3 | Ω | |
| Input Capacitance | CISS | VGS=0V, VDS =-25V, f=1MHz | 17 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-25V, f=1MHz | 4 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-25V, f=1MHz | 1.6 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-25V, ID=-0.15A | 1.1 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-25V, ID=-0.15A | 0.3 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-25V, ID=-0.15A | 0.2 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-25V, ID=-0.15A, RG=6Ω | 4.8 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-25V, ID=-0.15A, RG=6Ω | 19 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-25V, ID=-0.15A, RG=6Ω | 52 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-25V, ID=-0.15A, RG=6Ω | 32 | ns | ||
| Forward Voltage | VSD | VGS=0V, ISD=-0.15A | -0.45 | -1.5 | V | |
2412230931_ElecSuper-BSS8402DW-7-F-ES_C42379943.pdf
Related Products
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
