ElecSuper AOD444 ES N Channel MOSFET designed for DC DC conversion and charging circuit applications
Key Attributes
Model Number:
AOD444(ES)
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
RDS(on):
33mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
51pF
Output Capacitance(Coss):
62pF
Input Capacitance(Ciss):
860pF
Pd - Power Dissipation:
25W
Gate Charge(Qg):
20.3nC@10V
Mfr. Part #:
AOD444(ES)
Package:
TO-252
Product Description
Product Overview
The AOD444(ES) is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications, offering high density cell design, reliability, and avalanche rating.
Product Attributes
- Brand: ElecSuper
- Model: AOD444(ES)
- Package: TO-252
- Material: Halogen free, Pb-free
- Certifications: UL 94V-0
- Features: High density cell design, Reliable and rugged, Avalanche Rated, Low leakage current
Technical Specifications
| Parameter | Symbol | Conditions | Limit | Unit |
| Absolute Maximum Ratings | BVDSS | 60 | V | |
| VGS | ±20 | V | ||
| ID | TC=25°C | 20 | A | |
| ID | TC=75°C | 16 | A | |
| Electrical Characteristics | BVDSS | VGS=0V, ID=250uA | 60 | V |
| IDSS | VDS=60V, VGS=0V | 1.0 | uA | |
| IGSS | VDS=0V, VGS=±20V | ±100 | nA | |
| On Characteristics | VGS(TH) | VGS=VDS, ID=250uA | 1.0 - 2.5 | V |
| RDS(on) | VGS=10V, ID=20A | 26 - 33 | mΩ | |
| Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 860 | pF |
| COSS | 62 | pF | ||
| CRSS | 51 | pF | ||
| Switching Characteristics | td(ON) | VGS=10V, VDS=30V, ID=5A, RG=1.8Ω | 6 | ns |
| tr | 6 | ns | ||
| Body Diode Characteristics | VSD | VGS=0V, IS=10A | 0.7 - 1.5 | V |
2504101957_ElecSuper-AOD444-ES_C42434116.pdf
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