ElecSuper AOD4184A ES MOSFET N Channel Enhancement Mode with Low RDS ON and High Power Dissipation
Key Attributes
Model Number:
AOD4184A(ES)
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10.3mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
133pF
Input Capacitance(Ciss):
2.177nF
Output Capacitance(Coss):
150pF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
AOD4184A(ES)
Package:
TO-252
Product Description
Product Overview
The AOD4184A(ES) is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and halogen-free.
Product Attributes
- Brand: ElecSuper
- Model: AOD4184A(ES)
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Pb-free
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Drain-Source Voltage | BVDSS | 40 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current, TC=25°C | ID | 60 | A | |
| Continuous Drain Current, TC=100°C | ID | 36 | A | |
| Maximum Power Dissipation, TC=25°C | PD | 48 | W | |
| Pulsed Drain Current | IDM | 240 | A | a: Repetitive rating; pulse width limited by maximum junction temperature. |
| Avalanche Energy, Single Pulsed | EAS | 72 | mJ | b: Tj =25°C,VDD=20V, VG=10V, L=0.5mH,Rg=25Ω, IAS=17A. |
| Operating Junction Temperature | TJ | -55 to 150 | °C | |
| Lead Temperature | TL | 260 | °C | |
| Storage Temperature Range | Tstg | -55 to 150 | °C | |
| Junction-to-Case Thermal Resistance | RθJC | 2.6 | °C/W | Typical |
| Drain-to-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250uA |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=40V, VGS=0V |
| Gate-to-source Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Gate Threshold Voltage | VGS(TH) | 1.0 to 2.0 | V | VGS=VDS, ID=250uA |
| Drain-to-source On-resistance | RDS(on) | 5.9 to 7.7 | mΩ | VGS=10V, ID=20A (Typ.) |
| Drain-to-source On-resistance | RDS(on) | 7.9 to 10.3 | mΩ | VGS=4.5V, ID=10A (Typ.) |
| Input Capacitance | CISS | 2177 | pF | VGS=0V, f=1MHz, VDS=20V |
| Output Capacitance | COSS | 150 | pF | VGS=0V, f=1MHz, VDS=20V |
| Reverse Transfer Capacitance | CRSS | 133 | pF | VGS=0V, f=1MHz, VDS=20V |
| Total Gate Charge | QG(TOT) | 45 | nC | VGS=0 to 10V, VDS=20V, ID=20A |
| Gate-to-Source Charge | QGS | 8 | nC | VGS=0 to 10V, VDS=20V, ID=20A |
| Gate-to-Drain Charge | QGD | 11 | nC | VGS=0 to 10V, VDS=20V, ID=20A |
| Turn-On Delay Time | td(ON) | 12 | ns | VGS=10V, VDD=20V, ID=20A, RG=3Ω |
| Rise Time | tr | 25 | ns | VGS=10V, VDD=20V, ID=20A, RG=3Ω |
| Turn-Off Delay Time | td(OFF) | 43 | ns | VGS=10V, VDD=20V, ID=20A, RG=3Ω |
| Fall Time | tf | 10 | ns | VGS=10V, VDD=20V, ID=20A, RG=3Ω |
| Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=20A |
2504101957_ElecSuper-AOD4184A-ES_C42434099.pdf
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