Power Switch N Channel MOSFET ElecSuper 2N7002M3T5G ES with Low Gate Charge and Enhanced Performance
Key Attributes
Model Number:
2N7002M3T5G-ES
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
180mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.9Ω@10V;2.4Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.1pF
Number:
1 N-channel
Output Capacitance(Coss):
5.5pF
Input Capacitance(Ciss):
30.5pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
1.12nC@10V
Mfr. Part #:
2N7002M3T5G-ES
Package:
SOT-723
Product Description
Product Overview
The 2N7002M3T5G-ES is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free.
Product Attributes
- Brand: SuperMOS (ElecSuper)
- Origin: Not specified
- Material: Halogen free
- Color: Not specified
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25 | 0.18 | A | ||
| Continuous Drain Current | ID | TA=75 | 0.14 | A | ||
| Maximum Power Dissipation | PD | 150 | mW | |||
| Pulsed Drain Current | IDM | a | 0.72 | A | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 833 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=10mA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V,TJ=25°C | 1.0 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V,TJ=125°C | 100 | µA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±10 | µA | ||
| Forward Transconductance | gfs | VDS=10V, ID=0.1A | 0.24 | S | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250µA | 0.8 | 1.5 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=0.3A | 1.9 | 3 | Ω | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.2A | 2.4 | 4 | Ω | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS =10V | 30.5 | 45 | pF | |
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS =10V | 5.5 | 10 | pF | |
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS =10V | 4.1 | 8 | pF | |
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=30V, ID=0.2A | 1.12 | 2 | nC | |
| Gate-to-Source Charge | QGS | VGS=10V, VDS=30V, ID=0.2A | 0.1 | 0.2 | nC | |
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=30V, ID=0.2A | 0.23 | 0.5 | nC | |
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=30V, ID=0.2A, RG=6Ω | 3 | 6 | ns | |
| Rise Time | tr | VGS=10V, VDS=30V, ID=0.2A, RG=6Ω | 5 | 10 | ns | |
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=30V, ID=0.2A, RG=6Ω | 14 | 27 | ns | |
| Fall Time | tf | VGS=10V, VDS=30V, ID=0.2A, RG=6Ω | 9 | 17 | ns | |
| Forward Voltage | VSD | VGS=0V, IS=1A | 1.5 | V | ||
2504101957_ElecSuper-2N7002M3T5G-ES_C5224234.pdf
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