N Channel MOSFET ElecSuper ES2102EI Featuring Low Gate Charge and Excellent RDS ON for Power Switch
Key Attributes
Model Number:
ES2102EI
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
37mΩ@4.5V;47mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
44pF@10V
Number:
1 N-channel
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
323pF
Gate Charge(Qg):
6.5nC@4.5V
Mfr. Part #:
ES2102EI
Package:
SOT-323
Product Description
Product Overview
The ES2102EI is an N-Channel enhancement mode MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C | 4.5 | A | ||
| Continuous Drain Current | ID | TA=75°C | 3.8 | A | ||
| Maximum Power Dissipation | PD | 1.4 | W | |||
| Pulsed Drain Current | IDM | 18 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 90 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 100 | nA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.4 | 0.7 | 1.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=4A | 37 | 70 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=2.5V, ID=3A | 47 | 80 | mΩ | |
| Forward transconductance | gfs | VDS=5V, ID=2.5A | 1 | 20 | S | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 323 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 53 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 44 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=4.0A | 6.5 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=4.0A | 1 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=4.0A | 2.5 | nC | ||
| Gate Resistance | Rg | f=1MHz | 2.0 | Ω | ||
| Turn-On Delay Time | td(ON) | VGS=5V, VDD=10V, ID=1.0A, RG=3.3Ω | 9 | ns | ||
| Rise Time | tr | VGS=5V, VDD=10V, ID=1.0A, RG=3.3Ω | 12 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=5V, VDD=10V, ID=1.0A, RG=3.3Ω | 16 | ns | ||
| Fall Time | tf | VGS=5V, VDD=10V, ID=1.0A, RG=3.3Ω | 5 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=1A | 1.2 | V | ||
2504101957_ElecSuper-ES2102EI_C39832204.pdf
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