Compact P Channel MOSFET ElecSuper IRLML6401TRPBF ES optimized for power switch and charging circuits
Key Attributes
Model Number:
IRLML6401TRPBF-ES
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
3.8A
RDS(on):
29mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
620mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
101pF
Number:
1 P-Channel
Output Capacitance(Coss):
118pF
Input Capacitance(Ciss):
500pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
8.5nC@4.5V
Mfr. Part #:
IRLML6401TRPBF-ES
Package:
SOT-23
Product Description
Product Description
The IRLML6401TRPBF-ES is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and features high density cell design for low RDS(on), fast switching, and is avalanche rated with low leakage current.
Product Attributes
- Brand: ElecSuper
- Part Number: IRLML6401TRPBF-ES
- Package: SOT-23
- Material: Halogen free
- Certifications: UL 94V-0
- Packing: Tape & Reel (3,000 PCS per reel)
- Reel Size: 7 inches
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | -12 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C | -3.8 | A | ||
| Continuous Drain Current | ID | TA=100°C | -2.3 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 1.2 | W | ||
| Pulsed Drain Current | IDM | -15 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -12 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-12V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.4 | -0.62 | -1.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-3.8A | 29 | 40 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-2.5V, ID=-3A | 45 | 60 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-1.8V, ID=-2.5A | 67 | 85 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =-6V f=1MHz | 500 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-6V f=1MHz | 118 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-6V f=1MHz | 101 | pF | ||
| Total Gate Charge | QG | VGS=-4.5V, VDS=-6V ID =-3.8A | 8.5 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-4.5V, VDS=-6V ID =-3.8A | 1.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-4.5V, VDS=-6V ID =-3.8A | 2.6 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=-6V ID=-3.8A, RG=3Ω | 6 | ns | ||
| Rise Time | tr | VGS=-4.5V, VDS=-6V ID=-3.8A, RG=3Ω | 35 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-4.5V, VDS=-6V ID=-3.8A, RG=3Ω | 50 | ns | ||
| Fall Time | tf | VGS=-4.5V, VDS=-6V ID=-3.8A, RG=3Ω | 52 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=-3.8A | -1.5 | V | ||
2504101957_ElecSuper-IRLML6401TRPBF-ES_C22363750.pdf
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