MOSFET FM 7580D featuring high UIS capability and 100 percent UIS testing for E Bike controller switching
Key Attributes
Model Number:
7580D
Product Custom Attributes
Drain To Source Voltage:
75V
Current - Continuous Drain(Id):
86A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
145pF
Number:
1 N-channel
Pd - Power Dissipation:
147W
Input Capacitance(Ciss):
5.053nF
Gate Charge(Qg):
115nC@10V
Mfr. Part #:
7580D
Package:
TO-263-2
Product Description
Product Overview
The 7580D is an N-channel MOS Field Effect Transistor designed for high current switching applications. It features rugged EAS capability and ultra-low RDS(ON), making it suitable for PWM, load switching, and especially E-Bike controller applications. Its key advantages include excellent on-resistance, high UIS capability, and 100% UIS testing.
Product Attributes
- Brand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. (Superchip)
- Product Code: 7580D
- Package: TO-263
- File Number: S&CIC1692
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | (VGS=0V) | 75 | V | ||
| VGS | Gate-Source Voltage | (VDS=0V) | 20 | V | ||
| ID (DC) | Drain Current (DC) | at Tc=25 | 86 | A | ||
| ID (DC) | Drain Current (DC) | at Tc=100 | 60.4 | A | ||
| IDM (pluse) | Drain Current-Continuous@ Current-Pulsed | (Note 1) | 368 | A | ||
| dv/dt | Peak Diode Recovery Voltage | 7.3 | V/ns | |||
| PD | Maximum Power Dissipation | (Tc=25) | 147 | W | ||
| EAS | Single Pulse Avalanche Energy | (Note 2) | 625 | mJ | ||
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 | 175 | |||
| Thermal Characteristic | ||||||
| RJC | Thermal Resistance,Junction-to-Case | 1.02 | /W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 75 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=75V,VGS=0V, Tc=25 | 1 | A | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=75V,VGS=0V, Tc=125 | 10 | A | ||
| IGSS | Gate-Body Leakage Current | VGS=20V,VDS=0V | 100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS,ID=250A | 2 | 4 | V | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=40A | 7.0 | 8.5 | m | |
| Dynamic Characteristics | ||||||
| gFS | Forward Transconductance | VDS=10V,ID=15A | 20 | S | ||
| Ciss | Input Capacitance | VDS=25V,VGS=0V, f=1.0MHz | 5053 | PF | ||
| Coss | Output Capacitance | 442 | PF | |||
| Crss | Reverse Transfer Capacitance | 145 | PF | |||
| Qg | Total Gate Charge | VDS=50V,ID=40A, VGS=10V | 115 | nC | ||
| Qgs | Gate-Source Charge | 20 | nC | |||
| Qgd | Gate-Drain Charge | 50 | nC | |||
| Switching Times | ||||||
| td(on) | Turn-on Delay Time | VDD=30V,ID=40A,RL=15 VGS=10V,RG=2.5 | 23 | nS | ||
| tr | Turn-on Rise Time | 51 | nS | |||
| td(off) | Turn-Off Delay Time | 66 | nS | |||
| tf | Turn-Off Fall Time | 23 | nS | |||
| Source-Drain Diode Characteristics | ||||||
| ISD | Source-drain Current(Body Diode) | 86 | A | |||
| ISDM | Pulsed Source-Drain Current(Body Diode) | 368 | A | |||
| VSD | Forward On Voltage | (Note 1) TJ=25,ISD=40A,VGS=0V | 0.89 | 0.99 | V | |
| trr | Reverse Recovery Time | (Note 1) TJ=25,IF=75A di/dt=100A/s | 41 | nS | ||
| Qrr | Reverse Recovery Charge | (Note 1) | 86 | nC | ||
2411121101_FM-7580D_C2932023.pdf
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